/// <summary>
/// Applies device impact on the circuit equation system. If behavior of the device is nonlinear, this method is
/// called once every Newton-Raphson iteration.
/// </summary>
/// <param name="context">Context of current simulation.</param>
public override void ApplyModelValues(ISimulationContext context)
{
vt = Parameters.EmissionCoefficient * PhysicalConstants.Boltzmann *
PhysicalConstants.CelsiusToKelvin(Parameters.NominalTemperature) /
PhysicalConstants.DevicearyCharge;
gmin = Parameters.MinimalResistance ?? context.SimulationParameters.MinimalResistance;
smallBiasTreshold = -5 * vt;
capacitanceTreshold = Parameters.ForwardBiasDepletionCapacitanceCoefficient * Parameters.JunctionPotential;
var vd = Voltage - Parameters.SeriesResistance * Current;
var(id, geq, cd) = GetModelValues(vd);
var ieq = id - geq * vd;
// Diode
stamper.Stamp(geq, -ieq);
// Capacitance
var(cieq, cgeq) = IntegrationMethod.GetEquivalents(cd / context.TimeStep);
if (initialConditionCapacitor) // initial condition
{
capacitorStamper.Stamp(0, 0);
}
else
{
capacitorStamper.Stamp(cieq, cgeq);
}
Current = id + ic;
Conductance = geq;
}
/// <summary>
/// Applies device impact on the circuit equation system. If behavior of the device is nonlinear, this method is
/// called once every Newton-Raphson iteration.
/// </summary>
/// <param name="context">Context of current simulation.</param>
public override void ApplyModelValues(ISimulationContext context)
{
double ieq, geq;
if (firtDcPoint)
{
if (DefinitionDevice.InitialVoltage.HasValue)
{
ieq = DefinitionDevice.InitialVoltage.Value;
geq = 1;
}
else
{
ieq = geq = 0; // open circuit
}
}
else
{
(ieq, geq) = IntegrationMethod.GetEquivalents(DefinitionDevice.Capacity / context.TimeStep);
}
stamper.Stamp(ieq, geq);
}
/// <summary>
/// Applies device impact on the circuit equation system. If behavior of the device is nonlinear, this method is
/// called once every Newton-Raphson iteration.
/// </summary>
/// <param name="context">Context of current simulation.</param>
public override void ApplyModelValues(ISimulationContext context)
{
// cache params
vT = PhysicalConstants.Boltzmann *
PhysicalConstants.CelsiusToKelvin(Parameters.NominalTemperature) /
PhysicalConstants.DevicearyCharge;
var iS = Parameters.SaturationCurrent;
var iSe = Parameters.EmitterSaturationCurrent;
var iSc = Parameters.CollectorSaturationCurrent;
var nF = Parameters.ForwardEmissionCoefficient;
var nR = Parameters.ReverseEmissionCoefficient;
var nE = Parameters.EmitterSaturationCoefficient;
var nC = Parameters.CollectorSaturationCoefficient;
var bF = Parameters.ForwardBeta;
var bR = Parameters.ReverseBeta;
var earlyVoltageForward = Parameters.ForwardEarlyVoltage;
var earlyVolrateReverse = Parameters.ReverseEarlyVoltage;
var iKf = Parameters.ForwardCurrentCorner;
var iKr = Parameters.ReverseCurrentCorner;
var gmin = Parameters.MinimalResistance ?? context.SimulationParameters.MinimalResistance;
var polarity = Parameters.IsPnp ? -1 : +1;
var ggb = Parameters.BaseResistance > 0 ? 1 / Parameters.BaseResistance : 0;
var ggc = Parameters.CollectorResistance > 0 ? 1 / Parameters.CollectorResistance : 0;
var gge = Parameters.EmitterCapacitance > 0 ? 1 / Parameters.EmitterCapacitance : 0;
var vbe = VoltageBaseEmitter;
var vbc = VoltageBaseCollector;
// calculate junction currents
var(ibe, gbe) = DeviceHelpers.PnBJT(iS, vbe, nF * vT, gmin);
var(iben, gben) = DeviceHelpers.PnBJT(iSe, vbe, nE * vT, 0);
var(ibc, gbc) = DeviceHelpers.PnBJT(iS, vbc, nR * vT, gmin);
var(ibcn, gbcn) = DeviceHelpers.PnBJT(iSc, vbc, nC * vT, 0);
// base charge calculation
var q1 = 1 / (1 - vbc / earlyVoltageForward - vbe / earlyVolrateReverse);
var q2 = ibe / iKf + ibc / iKr;
var sqrt = Math.Sqrt(1 + 4 * q2);
var qB = q1 / 2 * (1 + sqrt);
var dQdbUbe = q1 * (qB / earlyVolrateReverse + gbe / (iKf * sqrt));
var dQbdUbc = q1 * (qB / earlyVoltageForward + gbc / (iKr * sqrt));
// excess phase missing
var ic = (ibe - ibc) / qB - ibc / bR - ibcn;
var ib = ibe / bF + iben + ibc / bR + ibcn;
var gpi = gbe / bF + gben;
var gmu = gbc / bR + gbcn;
var go = (gbc + (ibe - ibc) * dQbdUbc / qB) / qB;
var gm = (gbe - (ibe - ibc) * dQdbUbe / qB) / qB - go;
// terminal currents
var ceqbe = polarity * (ic + ib - vbe * (gm + go + gpi) + vbc * go);
var ceqbc = polarity * (-ic + vbe * (gm + go) - vbc * (gmu + go));
CurrentBase = ib;
CurrentCollector = ic;
CurrentEmitter = -ib - ic;
CurrentBaseEmitter = ibe;
CurrentBaseCollector = ibc;
Transconductance = gm;
OutputConductance = go;
ConductancePi = gpi;
ConductanceMu = gmu;
stamper.Stamp(gpi, gmu, gm, -go, ceqbe, ceqbc);
gb.Stamp(ggb);
ge.Stamp(gge);
gc.Stamp(ggc);
if (!(context.TimePoint > 0))
{
return;
}
var vcs = voltageCs.GetValue();
var tf = Parameters.ForwardTransitTime;
var tr = Parameters.ReverseTransitTime;
var fc = Parameters.ForwardBiasDepletionCoefficient;
var cje = Parameters.EmitterCapacitance;
var mje = Parameters.EmitterExponentialFactor;
var vje = Parameters.EmitterPotential;
var cjc = Parameters.CollectorCapacitance;
var mjc = Parameters.CollectorExponentialFactor;
var vjc = Parameters.CollectorPotential;
var cjs = Parameters.SubstrateCapacitance;
var mjs = Parameters.SubstrateExponentialFactor;
var vjs = Parameters.SubstratePotential;
var cbe = DeviceHelpers.JunctionCapacitance(vbe, cje, mje, vje, gbe * tf, fc);
var cbc = DeviceHelpers.JunctionCapacitance(vbc, cjc, mjc, vjc, gbc * tr, fc);
var ccs = DeviceHelpers.JunctionCapacitance(vcs, cjs, mjs, vjs, 0, fc);
// stamp capacitors
double cieq;
(cieq, cgeqbe) = chargebe.GetEquivalents(cbe / context.TimeStep);
capacbe.Stamp(cieq, cgeqbe);
(cieq, cgeqbc) = chargebe.GetEquivalents(cbc / context.TimeStep);
capacbc.Stamp(cieq, cgeqbc);
(cieq, cgeqcs) = chargebe.GetEquivalents(ccs / context.TimeStep);
capaccs.Stamp(cieq, cgeqcs);
}