public MosfetModelGenerator()
{
// Default MOS levels
Levels.Add(1, (string name, string type, string version) =>
{
var m = new Mosfet1Model(name);
switch (type.ToLower())
{
case "nmos": m.SetParameter("nmos", true); break;
case "pmos": m.SetParameter("pmos", true); break;
}
return(m);
});
Levels.Add(2, (string name, string type, string version) =>
{
var m = new Mosfet2Model(name);
switch (type.ToLower())
{
case "nmos": m.SetParameter("nmos", true); break;
case "pmos": m.SetParameter("pmos", true); break;
}
return(m);
});
Levels.Add(3, (string name, string type, string version) =>
{
var m = new Mosfet3Model(name);
switch (type.ToLower())
{
case "nmos": m.SetParameter("nmos", true); break;
case "pmos": m.SetParameter("pmos", true); break;
}
return(m);
});
}
public void When_MOS1PMOSDifferentialPair_Expect_Reference()
{
var model = new Mosfet1Model("Model");
model.SetParameter("pmos", true);
model.SetParameter("vto", -0.7);
model.SetParameter("kp", 12.57e-4);
var ckt = new Circuit(
new NodeMapper("VDD", "B12", "B13", "CTRL", "B14", "TH"),
model,
new VoltageSource("Vsupply", "VDD", "0", 5.0),
new CurrentSource("IBBIAS", "VDD", "B12", 10e-6),
new Mosfet1("MB1", "B13", "CTRL", "B12", "VDD", "Model"),
new Mosfet1("MB2", "B14", "TH", "B12", "VDD", "Model"),
new Resistor("RBD1", "B13", "0", 10e3),
new Resistor("RBD2", "B14", "0", 10e3),
// These resistors seem to be necessary for convergence... Any higher and the operating point can't be calculated
// new Resistor("Racc1", "B12", "B13", 1e6),
// new Resistor("Racc2", "B12", "B14", 1e6),
new VoltageSource("INA", "CTRL", "0", 3.333333333),
new VoltageSource("INB", "TH", "0", 1.6631)
);
// Calculate the operating point
var op = new OP("op");
op.ExportSimulationData += (sender, args) =>
{
var v = op.RealState.Solution;
};
// Disable source stepping and see if it converges
var config = op.Configurations.Get <BaseConfiguration>();
// config.SourceSteps = 0;
op.Run(ckt);
}
public void When_NMOSIVCharacteristic_Expect_NoException()
{
// <example_DC>
// Make the bipolar junction transistor
var nmos = new Mosfet1("M1")
{
Model = "example"
};
nmos.Connect("d", "g", "0", "0");
var nmosmodel = new Mosfet1Model("example");
nmosmodel.SetParameter("kp", 150.0e-3);
// Build the circuit
var ckt = new Circuit(
new VoltageSource("Vgs", "g", "0", 0),
new VoltageSource("Vds", "d", "0", 0),
nmosmodel,
nmos
);
// Sweep the base current and vce voltage
var dc = new DC("DC 1", new[]
{
new SweepConfiguration("Vgs", 0, 3, 0.2),
new SweepConfiguration("Vds", 0, 5, 0.1),
});
// Export the collector current
var currentExport = new RealPropertyExport(dc, "M1", "id");
// Run the simulation
dc.ExportSimulationData += (sender, args) =>
{
var vgsVoltage = dc.Sweeps[0].CurrentValue;
var vdsVoltage = dc.Sweeps[1].CurrentValue;
var current = currentExport.Value;
};
dc.Run(ckt);
// </example_DC>
}
public void When_NMOSIVCharacteristic_Expect_NoException()
{
// <example_DC>
// Create the mosfet and its model
var nmos = new Mosfet1("M1", "d", "g", "0", "0", "example");
var nmosmodel = new Mosfet1Model("example");
nmosmodel.SetParameter("kp", 150.0e-3);
// Build the circuit
var ckt = new Circuit(
new VoltageSource("Vgs", "g", "0", 0),
new VoltageSource("Vds", "d", "0", 0),
nmosmodel,
nmos
);
// Sweep the base current and vce voltage
var dc = new DC("DC 1", new[]
{
new ParameterSweep("Vgs", new LinearSweep(0, 3, 0.2)),
new ParameterSweep("Vds", new LinearSweep(0, 5, 0.1)),
});
// Export the collector current
var currentExport = new RealPropertyExport(dc, "M1", "id");
// Run the simulation
dc.ExportSimulationData += (sender, args) =>
{
var vgsVoltage = dc.GetCurrentSweepValue()[0];
var vdsVoltage = dc.GetCurrentSweepValue()[1];
var current = currentExport.Value;
};
dc.Run(ckt);
// </example_DC>
}