/// <summary>
/// 准备评估所需的电路参数
/// </summary>
public override void Prepare()
{
//计算电路参数
DesignCircuitParam();
double ILrmax = 0; //谐振电感电流最大值
double ILrrms_max = 0; //谐振电感电流有效值最大值
double VCrmax = 0; //谐振电容电压最大值
double ICfrms_max = 0; //滤波电容电流有效值最大值
double ITsmax = 0; //变压器副边电流最大值
//Graph graph1 = new Graph();
//Graph graph2 = new Graph();
//Graph graph3 = new Graph();
int n = Configuration.powerRatio.Length;
for (int j = 0; j < n; j++)
{
math_P = math_Pfull * Configuration.powerRatio[j]; //改变负载
Simulate(); //进行对应负载下的波形模拟
//graph1.Add(curve_vCr, "vCr_" + j);
//graph2.Add(curve_iLm, "iLm_" + j);
//graph2.Add(curve_iLr, "iLr_" + j);
//graph3.Add(curve_io, "io_" + j);
ILrmax = Math.Max(ILrmax, math_ILrmax);
ILrrms_max = Math.Max(ILrrms_max, math_ILrrms);
VCrmax = Math.Max(VCrmax, math_VCrmax);
ICfrms_max = Math.Max(ICfrms_max, math_ICfrms);
ITsmax = Math.Max(ITsmax, math_ITsmax);
//设置元器件的电路参数（用于评估）
primaryDualModule.AddEvalParameters(0, j, math_vSp, math_qZVS, curve_iSp, curve_iSp);
secondaryDualDiodeModule.AddEvalParameters(0, j, math_vSs, curve_iSs, curve_iSs);
resonantInductor.AddEvalParameters(0, j, math_ILrrms, math_ILrmax * 2);
transformer.AddEvalParameters(0, j, math_ILrrms, math_ITsrms);
resonantCapacitor.AddEvalParameters(0, j, math_ILrrms);
filteringCapacitor.AddEvalParameters(0, j, math_ICfrms);
}
//graph1.Draw();
//graph2.Draw();
//graph3.Draw();
//若认为谐振电感集成在变压器中，则不考虑额外谐振电感
//if (this.isLeakageInductanceIntegrated)
//{
// this.deviceInductorNum = 0;
//}
//设置元器件的设计条件
primaryDualModule.SetConditions(math_VSpmax, ILrmax, math_fs);
clampingDualDiodeModule.SetConditions(math_VSpmax, ILrmax, math_fs);
secondaryDualDiodeModule.SetConditions(math_VSsmax, math_n / math_No * ILrmax, math_fs);
resonantInductor.SetConditions(math_Lr, ILrmax, math_fs);
transformer.SetConditions(math_P, ILrmax, ITsmax, math_fs, math_n, math_No, math_ψ); //FIXME 磁链是否会变化？
flyingCapacitor.SetConditions(200 * 1e-6, math_VSpmax, ILrmax); //TODO 容值
resonantCapacitor.SetConditions(math_Cr, VCrmax, ILrrms_max);
filteringCapacitor.SetConditions(200 * 1e-6, math_VCfmax, ICfrms_max); //TODO 容值
}
/// <summary>
/// 准备评估所需的电路参数
/// </summary>
public override void Prepare()
{
//计算电路参数
DesignCircuitParam();
int m = Configuration.voltageRatio.Length;
int n = Configuration.powerRatio.Length;
double ILmax = 0;
double ILrms_max = 0;
double VCrmax = 0;
double ICfrms_max = 0;
double fsmax = 0;
double ψmax = 0;
//得到用于效率评估的不同输入电压与不同功率点的电路参数
for (int i = 0; i < m; i++)
{
//Graph graph1 = new Graph();
//Graph graph2 = new Graph();
//Graph graph3 = new Graph();
//Graph graph4 = new Graph();
//Graph graph5 = new Graph();
math_Vin = math_Vinmin + (math_Vinmax - math_Vinmin) * Configuration.voltageRatio[i];
for (int j = 0; j < n; j++)
{
math_P = math_Pfull * Configuration.powerRatio[j]; //改变负载
Simulate();
//graph1.Add(curve_iL, "iLr");
//graph2.Add(curve_iSp, "iSp");
//graph3.Add(curve_iSs, "iSs");
//graph4.Add(curve_iDs, "iDs");
//graph5.Add(curve_vCr, "vCr");
//记录最大值
ILmax = Math.Max(ILmax, math_ILp);
ILrms_max = Math.Max(ILrms_max, math_ILrms);
VCrmax = Math.Max(VCrmax, math_VCrp);
ICfrms_max = Math.Max(ICfrms_max, math_ICfrms);
fsmax = Math.Max(fsmax, math_fs);
ψmax = Math.Max(ψmax, math_ψ);
//设置元器件的电路参数（用于评估）
primaryDualModule.AddEvalParameters(i, j, math_vSp, math_qZVS, curve_iSp, curve_iSp, math_fs);
single.AddEvalParameters(i, j, math_vSs, curve_iSs, math_fs);
secondaryDualDiodeModule.AddEvalParameters(i, j, math_vDs, curve_iDs, curve_iDs, math_fs);
resonantInductor.AddEvalParameters(i, j, math_ILrms, math_ILp * 2, math_fs);
transformer.AddEvalParameters(i, j, math_ILrms, math_ILrms * math_n, math_fs, math_ψ);
resonantCapacitor.AddEvalParameters(i, j, math_ILrms);
filteringCapacitor.AddEvalParameters(i, j, math_ICfrms);
}
//graph1.Draw();
//graph2.Draw();
//graph3.Draw();
//graph4.Draw();
//graph5.Draw();
}
//若认为谐振电感集成在变压器中，则不考虑额外谐振电感
//if (this.isLeakageInductanceIntegrated)
//{
// this.deviceInductorNum = 0;
//}
//设置元器件的设计条件
primaryDualModule.SetConditions(math_Vinmax, ILmax, fsmax); //TODO 电流取RMS最大值 or 最大值？
single.SetConditions(math_Vo, math_n * ILmax, fsmax);
secondaryDualDiodeModule.SetConditions(math_Vo, math_n * ILmax, fsmax);
resonantInductor.SetConditions(math_Lr, ILmax, fsmax);
transformer.SetConditions(math_P, ILmax, ILmax * math_n, fsmax, math_n, 1, ψmax); //FIXME 磁链是否会变化？
resonantCapacitor.SetConditions(math_Cr, VCrmax, ILrms_max);
filteringCapacitor.SetConditions(200 * 1e-6, math_Vo, ICfrms_max);
}
