private static Structure CreateMIMTestStructure()
{
var topMetal = new Metal(Length.FromNanometers(4));
topMetal.SetWorkFunction(Energy.FromElectronVolts(4.45));
var oxide = new Dielectric(Length.FromNanometers(2));
oxide.DielectricConstant = 3.9;
oxide.BandGap = Energy.FromElectronVolts(8.9);
oxide.ElectronAffinity = Energy.FromElectronVolts(0.95);
var bottomMetal = new Metal(Length.FromNanometers(4));
bottomMetal.SetWorkFunction(Energy.FromElectronVolts(4.45));
var structure = new Structure();
structure.Temperature = new Temperature(300);
structure.AddLayer(bottomMetal);
structure.AddLayer(oxide);
structure.AddLayer(topMetal);
return(structure);
}
private static Structure CreateSiO2TestStructure()
{
var topMetal = new Metal(Length.FromNanometers(4));
topMetal.SetWorkFunction(Energy.FromElectronVolts(4.45));
var oxide = new Dielectric(Length.FromNanometers(2));
oxide.DielectricConstant = 3.9;
oxide.BandGap = Energy.FromElectronVolts(8.9);
oxide.ElectronAffinity = Energy.FromElectronVolts(0.95);
var semiconductor = new Semiconductor();
semiconductor.BandGap = Energy.FromElectronVolts(1.1252);
semiconductor.ElectronAffinity = Energy.FromElectronVolts(4.05);
semiconductor.DielectricConstant = 11.7;
semiconductor.IntrinsicCarrierConcentration = Concentration.FromPerCubicCentimeter(1.41E10);
semiconductor.DopingType = DopingType.N;
semiconductor.DopantConcentration = Concentration.FromPerCubicCentimeter(1E18);
var structure = new Structure();
structure.Temperature = new Temperature(300);
structure.AddLayer(semiconductor);
structure.AddLayer(oxide);
structure.AddLayer(topMetal);
return(structure);
}
public void TestWorkFunction()
{
var metal = new Metal(Length.FromNanometers(10));
var workFunction = Energy.FromElectronVolts(5);
metal.SetWorkFunction(workFunction);
Assert.AreEqual(metal.WorkFunction, workFunction);
}
public void TestPotential()
{
var thickness = Length.FromNanometers(10);
var metal = new Metal(thickness);
metal.SetWorkFunction(Energy.FromElectronVolts(5));
var expectedPotential = ElectricPotential.Zero;
var actualPotential = metal.GetPotential(thickness);
Assert.AreEqual(expectedPotential, actualPotential);
}
public void TestStructureWithoutDielectricIsInvalid()
{
var topMetal = new Metal(Length.FromNanometers(10));
topMetal.SetWorkFunction(Energy.FromElectronVolts(4.9));
var semiconductor = new Semiconductor();
semiconductor.BandGap = Energy.FromElectronVolts(1.125);
semiconductor.ElectronAffinity = Energy.FromElectronVolts(4.05);
semiconductor.DielectricConstant = 11.7;
semiconductor.IntrinsicCarrierConcentration = Concentration.FromPerCubicCentimeter(1.41E10);
semiconductor.DopingType = DopingType.N;
semiconductor.DopantConcentration = Concentration.FromPerCubicCentimeter(1E18);
var structure = new Structure();
structure.AddLayer(semiconductor);
structure.AddLayer(topMetal);
Assert.That(!structure.IsValid);
}