/// <summary>
/// Initializes a new instance of the <see cref="Frequency"/> class.
/// </summary>
/// <param name="context">The binding context.</param>
/// <exception cref="ArgumentNullException">Thrown if <paramref name="context"/> is <c>null</c>.</exception>
public Frequency(IComponentBindingContext context)
: base(context)
{
ModelParameters = context.ModelBehaviors.GetParameterSet <ModelParameters>();
Behavior = context.Behaviors.GetValue <IMosfetBiasingBehavior>();
_complex = context.GetState <IComplexSimulationState>();
Variables = new MosfetVariables <Complex>(context, _complex);
_elements = new ElementSet <Complex>(_complex.Solver, Variables.GetMatrixLocations(_complex.Map));
}
#pragma warning restore CS1591 // Missing XML comment for publicly visible type or member
/// <summary>
/// Updates the model properties.
/// </summary>
/// <param name="mp">The model parameters.</param>
public void Update(ModelParameters mp)
{
OxideCapFactor = 3.9 * 8.854214871e-12 / mp.OxideThickness;
Vtnom = mp.NominalTemperature * Constants.KOverQ;
Factor1 = mp.NominalTemperature / Constants.ReferenceTemperature;
Kt1 = Constants.Boltzmann * mp.NominalTemperature;
EgFet1 = 1.16 - (7.02e-4 * mp.NominalTemperature * mp.NominalTemperature) / (mp.NominalTemperature + 1108);
var arg1 = -EgFet1 / (Kt1 + Kt1) + 1.1150877 / (Constants.Boltzmann * Constants.ReferenceTemperature * 2);
PbFactor1 = -2 * Vtnom * (1.5 * Math.Log(Factor1) + Constants.Charge * arg1);
}
/// <summary>
/// Initializes a new instance of the <see cref="Frequency"/> class.
/// </summary>
/// <param name="context">The binding context.</param>
/// <exception cref="ArgumentNullException">Thrown if <paramref name="context"/> is <c>null</c>.</exception>
public Frequency(IComponentBindingContext context)
: base(context)
{
ModelParameters = context.ModelBehaviors.GetParameterSet <ModelParameters>();
Behavior = context.Behaviors.GetValue <IMosfetBiasingBehavior>();
_complex = context.GetState <IComplexSimulationState>();
Variables = new MosfetVariables <Complex>(Name, _complex, context.Nodes,
!ModelParameters.DrainResistance.Equals(0.0) || !ModelParameters.SheetResistance.Equals(0.0) && Behavior.Parameters.DrainSquares > 0,
!ModelParameters.SourceResistance.Equals(0.0) || !ModelParameters.SheetResistance.Equals(0.0) && Behavior.Parameters.SourceSquares > 0);
_elements = new ElementSet <Complex>(_complex.Solver, Variables.GetMatrixLocations(_complex.Map));
}
/// <summary>
/// Initializes a new instance of the <see cref="Time"/> class.
/// </summary>
/// <param name="context">The binding context.</param>
/// <exception cref="ArgumentNullException">Thrown if <paramref name="context"/> is <c>null</c>.</exception>
public Time(IComponentBindingContext context)
: base(context)
{
context.ThrowIfNull(nameof(context));
_time = context.GetState <ITimeSimulationState>();
_behavior = context.Behaviors.GetValue <IMosfetBiasingBehavior>();
_mp = context.ModelBehaviors.GetParameterSet <ModelParameters>();
var method = context.GetState <IIntegrationMethod>();
_vgs = new StateValue <double>(2); method.RegisterState(_vgs);
_vds = new StateValue <double>(2); method.RegisterState(_vds);
_vbs = new StateValue <double>(2); method.RegisterState(_vbs);
_cgs = new StateValue <double>(2); method.RegisterState(_cgs);
_cgd = new StateValue <double>(2); method.RegisterState(_cgd);
_cgb = new StateValue <double>(2); method.RegisterState(_cgb);
_qgs = method.CreateDerivative();
_qgd = method.CreateDerivative();
_qgb = method.CreateDerivative();
_qbd = method.CreateDerivative();
_qbs = method.CreateDerivative();
_behavior.UpdateContributions += UpdateTime;
}
/// <summary>
/// Updates the charges and capacitances..
/// </summary>
/// <param name="mode">The mode.</param>
/// <param name="vgs">The gate-source voltage.</param>
/// <param name="vds">The drain-source voltage.</param>
/// <param name="vbs">The bulk-source voltage.</param>
/// <param name="von">The threshold voltage.</param>
/// <param name="vdsat">The saturation voltage.</param>
/// <param name="mp">The model parameters.</param>
/// <param name="tp">The temperature-dependent properties.</param>
public void Update(double mode, double vgs, double vds, double vbs, double von, double vdsat,
ModelParameters mp,
TemperatureProperties tp)
{
var vbd = vbs - vds;
var vgd = vgs - vds;
double arg, sarg, sargsw;
/*
* now we do the hard part of the bulk-drain and bulk-source
* diode - we evaluate the non-linear capacitance and
* charge
*
* the basic equations are not hard, but the implementation
* is somewhat long in an attempt to avoid log/exponential
* evaluations
*/
/*
* charge storage elements
*
*.. bulk-drain and bulk-source depletion capacitances
*/
// Can't bypass the diode capacitance calculations
if (!tp.Cbs.Equals(0.0) || !tp.CbsSidewall.Equals(0.0))
{
if (vbs < tp.TempDepCap)
{
arg = 1 - vbs / tp.TempBulkPotential;
/*
* the following block looks somewhat long and messy,
* but since most users use the default grading
* coefficients of .5, and sqrt is MUCH faster than an
* Math.Exp(Math.Log()) we use this special case code to buy time.
* (as much as 10% of total job time!)
*/
if (mp.BulkJunctionBotGradingCoefficient.Equals(mp.BulkJunctionSideGradingCoefficient))
{
if (mp.BulkJunctionBotGradingCoefficient.Equals(0.5))
{
sarg = sargsw = 1 / Math.Sqrt(arg);
}
else
{
sarg = sargsw =
Math.Exp(-mp.BulkJunctionBotGradingCoefficient *
Math.Log(arg));
}
}
else
{
if (mp.BulkJunctionBotGradingCoefficient.Equals(0.5))
{
sarg = 1 / Math.Sqrt(arg);
}
else
{
sarg = Math.Exp(-mp.BulkJunctionBotGradingCoefficient *
Math.Log(arg));
}
if (mp.BulkJunctionSideGradingCoefficient.Equals(0.5))
{
sargsw = 1 / Math.Sqrt(arg);
}
else
{
sargsw = Math.Exp(-mp.BulkJunctionSideGradingCoefficient *
Math.Log(arg));
}
}
Qbs = tp.TempBulkPotential * (tp.Cbs *
(1 - arg * sarg) / (1 - mp.BulkJunctionBotGradingCoefficient)
+ tp.CbsSidewall *
(1 - arg * sargsw) /
(1 - mp.BulkJunctionSideGradingCoefficient));
Cbs = tp.Cbs * sarg + tp.CbsSidewall * sargsw;
}
else
{
Qbs = tp.F4s + vbs * (tp.F2s + vbs * (tp.F3s / 2));
Cbs = tp.F2s + tp.F3s * vbs;
}
}
else
{
Qbs = 0;
Cbs = 0;
}
// can't bypass the diode capacitance calculations
if (!tp.Cbd.Equals(0.0) || !tp.CbdSidewall.Equals(0.0))
{
if (vbd < tp.TempDepCap)
{
arg = 1 - vbd / tp.TempBulkPotential;
/*
* the following block looks somewhat long and messy,
* but since most users use the default grading
* coefficients of .5, and sqrt is MUCH faster than an
* Math.Exp(Math.Log()) we use this special case code to buy time.
* (as much as 10% of total job time!)
*/
if (mp.BulkJunctionBotGradingCoefficient.Equals(0.5) &&
mp.BulkJunctionSideGradingCoefficient.Equals(0.5))
{
sarg = sargsw = 1 / Math.Sqrt(arg);
}
else
{
if (mp.BulkJunctionBotGradingCoefficient == .5)
{
sarg = 1 / Math.Sqrt(arg);
}
else
{
sarg = Math.Exp(-mp.BulkJunctionBotGradingCoefficient *
Math.Log(arg));
}
if (mp.BulkJunctionSideGradingCoefficient == .5)
{
sargsw = 1 / Math.Sqrt(arg);
}
else
{
sargsw = Math.Exp(-mp.BulkJunctionSideGradingCoefficient *
Math.Log(arg));
}
}
Qbd = tp.TempBulkPotential * (tp.Cbd *
(1 - arg * sarg)
/ (1 - mp.BulkJunctionBotGradingCoefficient)
+ tp.CbdSidewall *
(1 - arg * sargsw)
/ (1 - mp.BulkJunctionSideGradingCoefficient));
Cbd = tp.Cbd * sarg + tp.CbdSidewall * sargsw;
}
else
{
Qbd = tp.F4d + vbd * (tp.F2d + vbd * tp.F3d / 2);
Cbd = tp.F2d + vbd * tp.F3d;
}
}
else
{
Qbd = 0;
Cbd = 0;
}
// Calculate Meyer capacitances
double cgs, cgd, cgb;
if (mode > 0)
{
Transistor.MeyerCharges(vgs, vgd, von, vdsat, out cgs, out cgd, out cgb, tp.TempPhi, tp.OxideCap);
}
else
{
Transistor.MeyerCharges(vgd, vgs, von, vdsat, out cgd, out cgs, out cgb, tp.TempPhi, tp.OxideCap);
}
Cgs = cgs;
Cgd = cgd;
Cgb = cgb;
}
/// <summary>
/// Calculates the charges and capacitances for the specified voltages.
/// </summary>
/// <param name="behavior">The biasing behavior.</param>
/// <param name="mp">The model parameters.</param>
public void Calculate(IMosfetBiasingBehavior behavior, ModelParameters mp)
{
var tp = behavior.Properties;
var vgs = behavior.Vgs;
var vds = behavior.Vds;
var vbs = behavior.Vbs;
/*
* Now we do the hard part of the bulk-drain and bulk-source
* diode - we evaluate the non-linear capacitance and
* charge.
*
* The basic equations are not hard, but the implementation
* is somewhat long in an attempt to avoid log/exponential
* evaluations.
*/
// Bulk-source depletion capacitances
{
/* can't bypass the diode capacitance calculations */
if (tp.Cbs != 0 || tp.CbsSidewall != 0)
{
if (vbs < tp.TempDepCap)
{
double arg = 1 - vbs / tp.TempBulkPotential;
double sarg, sargsw;
/*
* the following block looks somewhat long and messy,
* but since most users use the default grading
* coefficients of .5, and sqrt is MUCH faster than an
* Math.Exp(Math.Log()) we use this special case code to buy time.
* (as much as 10% of total job time!)
*/
if (mp.BulkJunctionBotGradingCoefficient == mp.BulkJunctionSideGradingCoefficient)
{
if (mp.BulkJunctionBotGradingCoefficient == .5)
{
sarg = sargsw = 1 / Math.Sqrt(arg);
}
else
{
sarg = sargsw = Math.Exp(-mp.BulkJunctionBotGradingCoefficient * Math.Log(arg));
}
}
else
{
if (mp.BulkJunctionBotGradingCoefficient == .5)
{
sarg = 1 / Math.Sqrt(arg);
}
else
{
sarg = Math.Exp(-mp.BulkJunctionBotGradingCoefficient * Math.Log(arg));
}
if (mp.BulkJunctionSideGradingCoefficient == .5)
{
sargsw = 1 / Math.Sqrt(arg);
}
else
{
sargsw = Math.Exp(-mp.BulkJunctionSideGradingCoefficient * Math.Log(arg));
}
}
Qbs = tp.TempBulkPotential * (tp.Cbs *
(1 - arg * sarg) / (1 - mp.BulkJunctionBotGradingCoefficient)
+ tp.CbsSidewall *
(1 - arg * sargsw) /
(1 - mp.BulkJunctionSideGradingCoefficient));
Cbs = tp.Cbs * sarg + tp.CbsSidewall * sargsw;
}
else
{
Qbs = tp.F4s + vbs * (tp.F2s + vbs * (tp.F3s / 2));
Cbs = tp.F2s + tp.F3s * vbs;
}
}
else
{
Qbs = 0;
Cbs = 0;
}
}
// Bulk-drain depletion capacitances
{
var vbd = vbs - vds;
if (tp.Cbd != 0 || tp.CbdSidewall != 0)
{
if (vbd < tp.TempDepCap)
{
double arg = 1 - vbd / tp.TempBulkPotential;
double sarg, sargsw;
/*
* the following block looks somewhat long and messy,
* but since most users use the default grading
* coefficients of .5, and sqrt is MUCH faster than an
* Math.Exp(Math.Log()) we use this special case code to buy time.
* (as much as 10% of total job time!)
*/
if (mp.BulkJunctionBotGradingCoefficient == .5 && mp.BulkJunctionSideGradingCoefficient == .5)
{
sarg = sargsw = 1 / Math.Sqrt(arg);
}
else
{
if (mp.BulkJunctionBotGradingCoefficient == .5)
{
sarg = 1 / Math.Sqrt(arg);
}
else
{
sarg = Math.Exp(-mp.BulkJunctionBotGradingCoefficient * Math.Log(arg));
}
if (mp.BulkJunctionSideGradingCoefficient == .5)
{
sargsw = 1 / Math.Sqrt(arg);
}
else
{
sargsw = Math.Exp(-mp.BulkJunctionSideGradingCoefficient * Math.Log(arg));
}
}
Qbd = tp.TempBulkPotential * (tp.Cbd *
(1 - arg * sarg)
/ (1 - mp.BulkJunctionBotGradingCoefficient)
+ tp.CbdSidewall *
(1 - arg * sargsw)
/ (1 - mp.BulkJunctionSideGradingCoefficient));
Cbd = tp.Cbd * sarg +
tp.CbdSidewall * sargsw;
}
else
{
Qbd = tp.F4d + vbd * (tp.F2d + vbd * tp.F3d / 2);
Cbd = tp.F2d + vbd * tp.F3d;
}
}
else
{
Qbd = 0;
Cbd = 0;
}
}
// Meyer capacitance calculation
{
/*
* new cmeyer - this just evaluates at the current time,
* expects you to remember values from previous time
* returns 1/2 of non-constant portion of capacitance
* you must add in the other half from previous time
* and the constant part
*/
double cgs, cgd, cgb;
if (behavior.Mode > 0)
{
Transistor.MeyerCharges(vgs, vgs - vds, mp.MosfetType * behavior.Von, mp.MosfetType * behavior.Vdsat, out cgs, out cgd, out cgb, tp.TempPhi, tp.OxideCap);
}
else
{
Transistor.MeyerCharges(vgs - vds, vgs, mp.MosfetType * behavior.Von, mp.MosfetType * behavior.Vdsat, out cgd, out cgs, out cgb, tp.TempPhi, tp.OxideCap);
}
Cgs = cgs;
Cgd = cgd;
Cgb = cgb;
}
}
#pragma warning restore CS1591 // Missing XML comment for publicly visible type or member
/// <summary>
/// Updates the specified properties.
/// </summary>
/// <param name="name">The name.</param>
/// <param name="p">The parameters of the transistor.</param>
/// <param name="mp">The model parameters.</param>
/// <param name="mprp">The model properties.</param>
public void Update(string name, Parameters p, ModelParameters mp, ModelProperties mprp)
{
if (!mp.Transconductance.Given)
{
mp.Transconductance = new GivenParameter <double>(mp.SurfaceMobility * mprp.OxideCapFactor * 1e-4, false);
}
TempVt = p.Temperature * Constants.KOverQ;
var ratio = p.Temperature / mp.NominalTemperature;
var fact2 = p.Temperature / Constants.ReferenceTemperature;
var kt = p.Temperature * Constants.Boltzmann;
var egfet = 1.16 - (7.02e-4 * p.Temperature * p.Temperature) /
(p.Temperature + 1108);
var arg = -egfet / (kt + kt) + 1.1150877 / (Constants.Boltzmann * (Constants.ReferenceTemperature + Constants.ReferenceTemperature));
var pbfact = -2 * TempVt * (1.5 * Math.Log(fact2) + Constants.Charge * arg);
OxideCap = mprp.OxideCapFactor * EffectiveLength * p.ParallelMultiplier * p.Width;
if (p.Length - 2 * mp.LateralDiffusion <= 0)
{
SpiceSharpWarning.Warning(this, "{0}: effective channel length less than zero".FormatString(name));
}
var ratio4 = ratio * Math.Sqrt(ratio);
TempTransconductance = mp.Transconductance / ratio4;
TempSurfaceMobility = mp.SurfaceMobility / ratio4;
var phio = (mp.Phi - mprp.PbFactor1) / mprp.Factor1;
TempPhi = fact2 * phio + pbfact;
TempVbi = mp.Vt0 - mp.MosfetType * (mp.Gamma * Math.Sqrt(mp.Phi)) + .5 * (mprp.EgFet1 - egfet) + mp.MosfetType * .5 * (TempPhi - mp.Phi);
TempVt0 = TempVbi + mp.MosfetType * mp.Gamma * Math.Sqrt(TempPhi);
var TempSaturationCurrent = mp.JunctionSatCur * Math.Exp(-egfet / TempVt + mprp.EgFet1 / mprp.Vtnom);
var TempSaturationCurrentDensity = mp.JunctionSatCurDensity * Math.Exp(-egfet / TempVt + mprp.EgFet1 / mprp.Vtnom);
var pbo = (mp.BulkJunctionPotential - mprp.PbFactor1) / mprp.Factor1;
TempBulkPotential = fact2 * pbo + pbfact;
if ((TempSaturationCurrentDensity == 0) ||
(p.DrainArea == 0) ||
(p.SourceArea == 0))
{
SourceVCritical = DrainVCritical =
TempVt * Math.Log(TempVt / (Constants.Root2 * p.ParallelMultiplier * TempSaturationCurrent));
}
else
{
DrainVCritical =
TempVt * Math.Log(TempVt / (Constants.Root2 *
p.ParallelMultiplier *
TempSaturationCurrentDensity * p.DrainArea));
SourceVCritical =
TempVt * Math.Log(TempVt / (Constants.Root2 *
p.ParallelMultiplier *
TempSaturationCurrentDensity * p.SourceArea));
}
if (mp.DrainResistance.Given)
{
if (mp.DrainResistance != 0)
{
DrainConductance = p.ParallelMultiplier / mp.DrainResistance;
}
else
{
DrainConductance = 0;
}
}
else if (mp.SheetResistance.Given)
{
if (mp.SheetResistance != 0)
{
DrainConductance = p.ParallelMultiplier / (mp.SheetResistance * p.DrainSquares);
}
else
{
DrainConductance = 0;
}
}
else
{
DrainConductance = 0;
}
if (mp.SourceResistance.Given)
{
if (mp.SourceResistance != 0)
{
SourceConductance = p.ParallelMultiplier / mp.SourceResistance;
}
else
{
SourceConductance = 0;
}
}
else if (mp.SheetResistance.Given)
{
if ((mp.SheetResistance != 0) && (p.SourceSquares != 0))
{
SourceConductance = p.ParallelMultiplier / (mp.SheetResistance * p.SourceSquares);
}
else
{
SourceConductance = 0;
}
}
else
{
SourceConductance = 0;
}
EffectiveLength = p.Length - (2 * mp.LateralDiffusion);
var gmaold = (mp.BulkJunctionPotential - pbo) / pbo;
var capfact = 1 / (1 + (mp.BulkJunctionBotGradingCoefficient *
((4e-4 * (mp.NominalTemperature - Constants.ReferenceTemperature)) - gmaold)));
TempCbd = mp.CapBd * capfact;
TempCbs = mp.CapBs * capfact;
TempCj = mp.BulkCapFactor * capfact;
capfact = 1 / (1 + (mp.BulkJunctionSideGradingCoefficient *
((4e-4 * (mp.NominalTemperature - Constants.ReferenceTemperature)) - gmaold)));
TempCjsw = mp.SidewallCapFactor * capfact;
TempBulkPotential = (fact2 * pbo) + pbfact;
var gmanew = (TempBulkPotential - pbo) / pbo;
capfact = 1 + (mp.BulkJunctionBotGradingCoefficient *
((4e-4 * (p.Temperature - Constants.ReferenceTemperature)) - gmanew));
TempCbd *= capfact;
TempCbs *= capfact;
TempCj *= capfact;
capfact = 1 + (mp.BulkJunctionSideGradingCoefficient *
((4e-4 * (p.Temperature - Constants.ReferenceTemperature)) - gmanew));
TempCjsw *= capfact;
TempDepCap = mp.ForwardCapDepletionCoefficient * TempBulkPotential;
double czbd, czbdsw;
if (mp.CapBd.Given)
{
czbd = TempCbd * p.ParallelMultiplier;
}
else
{
if (mp.BulkCapFactor.Given)
{
czbd = TempCj * p.ParallelMultiplier * p.DrainArea;
}
else
{
czbd = 0;
}
}
if (mp.SidewallCapFactor.Given)
{
czbdsw = TempCjsw * p.DrainPerimeter * p.ParallelMultiplier;
}
else
{
czbdsw = 0;
}
arg = 1 - mp.ForwardCapDepletionCoefficient;
var sarg = Math.Exp((-mp.BulkJunctionBotGradingCoefficient) * Math.Log(arg));
var sargsw = Math.Exp((-mp.BulkJunctionSideGradingCoefficient) * Math.Log(arg));
Cbd = czbd;
CbdSidewall = czbdsw;
F2d = (czbd * (1 - (mp.ForwardCapDepletionCoefficient *
(1 + mp.BulkJunctionBotGradingCoefficient))) * sarg / arg)
+ (czbdsw * (1 - (mp.ForwardCapDepletionCoefficient *
(1 + mp.BulkJunctionSideGradingCoefficient))) *
sargsw / arg);
F3d = (czbd * mp.BulkJunctionBotGradingCoefficient * sarg / arg /
TempBulkPotential)
+ (czbdsw * mp.BulkJunctionSideGradingCoefficient * sargsw / arg /
TempBulkPotential);
F4d = (czbd * TempBulkPotential * (1 - (arg * sarg)) /
(1 - mp.BulkJunctionBotGradingCoefficient))
+ (czbdsw * TempBulkPotential * (1 - (arg * sargsw)) /
(1 - mp.BulkJunctionSideGradingCoefficient))
- (F3d / 2 *
(TempDepCap * TempDepCap))
- (TempDepCap * F2d);
double czbs, czbssw;
if (mp.CapBs.Given)
{
czbs = TempCbs * p.ParallelMultiplier;
}
else
{
if (mp.BulkCapFactor.Given)
{
czbs = TempCj * p.SourceArea * p.ParallelMultiplier;
}
else
{
czbs = 0;
}
}
if (mp.SidewallCapFactor.Given)
{
czbssw = TempCjsw * p.SourcePerimeter * p.ParallelMultiplier;
}
else
{
czbssw = 0;
}
arg = 1 - mp.ForwardCapDepletionCoefficient;
sarg = Math.Exp((-mp.BulkJunctionBotGradingCoefficient) * Math.Log(arg));
sargsw = Math.Exp((-mp.BulkJunctionSideGradingCoefficient) * Math.Log(arg));
Cbs = czbs;
CbsSidewall = czbssw;
F2s = (czbs * (1 - (mp.ForwardCapDepletionCoefficient *
(1 + mp.BulkJunctionBotGradingCoefficient))) * sarg / arg)
+ (czbssw * (1 - (mp.ForwardCapDepletionCoefficient *
(1 + mp.BulkJunctionSideGradingCoefficient))) *
sargsw / arg);
F3s = (czbs * mp.BulkJunctionBotGradingCoefficient * sarg / arg /
TempBulkPotential)
+ (czbssw * mp.BulkJunctionSideGradingCoefficient * sargsw / arg /
TempBulkPotential);
F4s = (czbs * TempBulkPotential * (1 - (arg * sarg)) /
(1 - mp.BulkJunctionBotGradingCoefficient))
+ (czbssw * TempBulkPotential * (1 - (arg * sargsw)) /
(1 - mp.BulkJunctionSideGradingCoefficient))
- (F3s / 2 *
(TempDepCap * TempDepCap))
- (TempDepCap * F2s);
}