/// <summary>
/// Execute behavior
/// </summary>
/// <param name="simulation">Base simulation</param>
public override void Load(BaseSimulation simulation)
{
if (simulation == null)
{
throw new ArgumentNullException(nameof(simulation));
}
var state = simulation.RealState;
double drainSatCur, sourceSatCur,
vgs, vds, vbs, vbd, vgd;
double von;
double vdsat, cdrain, cdreq;
int xnrm, xrev;
var vt = Circuit.KOverQ * _bp.Temperature;
var check = 1;
/* DETAILPROF */
/* first, we compute a few useful values - these could be
* pre - computed, but for historical reasons are still done
* here. They may be moved at the expense of instance size
*/
var effectiveLength = _bp.Length - 2 * _mbp.LateralDiffusion;
// This is how Spice 3f5 implements it... There may be better ways to check for 0.0
if (_temp.TempSaturationCurrentDensity.Equals(0) || _bp.DrainArea.Value.Equals(0) || _bp.SourceArea.Value.Equals(0))
{
drainSatCur = _temp.TempSaturationCurrent;
sourceSatCur = _temp.TempSaturationCurrent;
}
else
{
drainSatCur = _temp.TempSaturationCurrentDensity * _bp.DrainArea;
sourceSatCur = _temp.TempSaturationCurrentDensity * _bp.SourceArea;
}
var beta = _temp.TempTransconductance * _bp.Width / effectiveLength;
/*
* ok - now to do the start - up operations
*
* we must get values for vbs, vds, and vgs from somewhere
* so we either predict them or recover them from last iteration
* These are the two most common cases - either a prediction
* step or the general iteration step and they
* share some code, so we put them first - others later on
*/
if (state.Init == InitializationModes.Float || (simulation is TimeSimulation tsim && tsim.Method.BaseTime.Equals(0.0)) ||
state.Init == InitializationModes.Fix && !_bp.Off)
{
// general iteration
vbs = _mbp.MosfetType * (state.Solution[_bulkNode] - state.Solution[SourceNodePrime]);
vgs = _mbp.MosfetType * (state.Solution[_gateNode] - state.Solution[SourceNodePrime]);
vds = _mbp.MosfetType * (state.Solution[DrainNodePrime] - state.Solution[SourceNodePrime]);
/* now some common crunching for some more useful quantities */
vbd = vbs - vds;
vgd = vgs - vds;
var vgdo = VoltageGs - VoltageDs;
von = _mbp.MosfetType * Von;
/*
* limiting
* we want to keep device voltages from changing
* so fast that the exponentials churn out overflows
* and similar rudeness
*/
if (VoltageDs >= 0)
{
vgs = Transistor.LimitFet(vgs, VoltageGs, von);
vds = vgs - vgd;
vds = Transistor.LimitVoltageDs(vds, VoltageDs);
}
else
{
vgd = Transistor.LimitFet(vgd, vgdo, von);
vds = vgs - vgd;
vds = -Transistor.LimitVoltageDs(-vds, -VoltageDs);
vgs = vgd + vds;
}
if (vds >= 0)
{
vbs = Transistor.LimitJunction(vbs, VoltageBs, vt, _temp.SourceVCritical, out check);
}
else
{
vbd = Transistor.LimitJunction(vbd, VoltageBd, vt, _temp.DrainVCritical, out check);
vbs = vbd + vds;
}
}
/// <summary>
/// Execute behavior
/// </summary>
/// <param name="simulation">Base simulation</param>
public override void Load(BaseSimulation simulation)
{
if (simulation == null)
{
throw new ArgumentNullException(nameof(simulation));
}
var state = simulation.RealState;
double drainSatCur, sourceSatCur,
vgs, vds, vbs, vbd, vgd;
double von;
double vdsat,
cdrain,
cdreq;
int xnrm, xrev;
var vt = Circuit.KOverQ * _bp.Temperature;
var check = 1;
/* DETAILPROF */
/* first, we compute a few useful values - these could be
* pre - computed, but for historical reasons are still done
* here. They may be moved at the expense of instance size
*/
var effectiveLength = _bp.Length - 2 * _mbp.LateralDiffusion;
if (_temp.TempSaturationCurrentDensity.Equals(0.0) || _bp.DrainArea.Value.Equals(0.0) || _bp.SourceArea.Value.Equals(0.0))
{
drainSatCur = _temp.TempSaturationCurrent;
sourceSatCur = _temp.TempSaturationCurrent;
}
else
{
drainSatCur = _temp.TempSaturationCurrentDensity * _bp.DrainArea;
sourceSatCur = _temp.TempSaturationCurrentDensity * _bp.SourceArea;
}
var beta = _temp.TempTransconductance * _bp.Width / effectiveLength;
var oxideCap = _modeltemp.OxideCapFactor * effectiveLength * _bp.Width;
/* DETAILPROF */
/*
* ok - now to do the start - up operations
*
* we must get values for vbs, vds, and vgs from somewhere
* so we either predict them or recover them from last iteration
* These are the two most common cases - either a prediction
* step or the general iteration step and they
* share some code, so we put them first - others later on
*/
if (state.Init == RealState.InitializationStates.InitFloat || state.Init == RealState.InitializationStates.InitTransient ||
state.Init == RealState.InitializationStates.InitFix && !_bp.Off)
{
// General iteration
vbs = _mbp.MosfetType * (state.Solution[_bulkNode] - state.Solution[SourceNodePrime]);
vgs = _mbp.MosfetType * (state.Solution[_gateNode] - state.Solution[SourceNodePrime]);
vds = _mbp.MosfetType * (state.Solution[DrainNodePrime] - state.Solution[SourceNodePrime]);
/* now some common crunching for some more useful quantities */
/* DETAILPROF */
vbd = vbs - vds;
vgd = vgs - vds;
var vgdo = VoltageGs - VoltageDs;
von = _mbp.MosfetType * Von;
/*
* limiting
* we want to keep device voltages from changing
* so fast that the exponentials churn out overflows
* and similar rudeness
*/
// NOTE: Spice 3f5 does not write out Vgs during DC analysis, so DEVfetlim may give different results in Spice 3f5
if (VoltageDs >= 0)
{
vgs = Transistor.LimitFet(vgs, VoltageGs, von);
vds = vgs - vgd;
vds = Transistor.LimitVoltageDs(vds, VoltageDs);
}
else
{
vgd = Transistor.LimitFet(vgd, vgdo, von);
vds = vgs - vgd;
vds = -Transistor.LimitVoltageDs(-vds, -VoltageDs);
vgs = vgd + vds;
}
if (vds >= 0)
{
vbs = Transistor.LimitJunction(vbs, VoltageBs, vt, _temp.SourceVCritical, out check);
}
else
{
vbd = Transistor.LimitJunction(vbd, VoltageBd, vt, _temp.DrainVCritical, out check);
vbs = vbd + vds;
}
/* NODELIMITING */
}
else
{
/* DETAILPROF */
/* ok - not one of the simple cases, so we have to
* look at all of the possibilities for why we were
* called. We still just initialize the three voltages
*/
if (state.Init == RealState.InitializationStates.InitJunction && !_bp.Off)
{
vds = _mbp.MosfetType * _bp.InitialVoltageDs;
vgs = _mbp.MosfetType * _bp.InitialVoltageGs;
vbs = _mbp.MosfetType * _bp.InitialVoltageBs;
// TODO: Check what this is supposed to do...
if (vds.Equals(0.0) && vgs.Equals(0.0) && vbs.Equals(0.0) && (state.UseDc || state.Domain == RealState.DomainType.None || !state.UseIc))
{
vbs = -1;
vgs = _mbp.MosfetType * _temp.TempVt0;
vds = 0;
}
}
else
{
vbs = vgs = vds = 0;
}
}
/* DETAILPROF */
/*
* now all the preliminaries are over - we can start doing the
* real work
*/
vbd = vbs - vds;
vgd = vgs - vds;
/*
* bulk - source and bulk - drain diodes
* here we just evaluate the ideal diode current and the
* corresponding derivative (conductance).
*/
if (vbs <= 0)
{
CondBs = sourceSatCur / vt;
BsCurrent = CondBs * vbs;
CondBs += state.Gmin;
}
else
{
var evbs = Math.Exp(Math.Min(Transistor.MaximumExponentArgument, vbs / vt));
CondBs = sourceSatCur * evbs / vt + state.Gmin;
BsCurrent = sourceSatCur * (evbs - 1);
}
if (vbd <= 0)
{
CondBd = drainSatCur / vt;
BdCurrent = CondBd * vbd;
CondBd += state.Gmin;
}
else
{
var evbd = Math.Exp(Math.Min(Transistor.MaximumExponentArgument, vbd / vt));
CondBd = drainSatCur * evbd / vt + state.Gmin;
BdCurrent = drainSatCur * (evbd - 1);
}
/* now to determine whether the user was able to correctly
* identify the source and drain of his device
*/
if (vds >= 0)
{
/* normal mode */
Mode = 1;
}
else
{
/* inverse mode */
Mode = -1;
}
/* DETAILPROF */
{
/*
* subroutine moseq3(vds, vbs, vgs, gm, gds, gmbs,
* qg, qc, qb, cggb, cgdb, cgsb, cbgb, cbdb, cbsb)
*/
/*
* this routine evaluates the drain current, its derivatives and
* the charges associated with the gate, channel and bulk
* for mosfets based on semi - empirical equations
*/
/*
* common / mosarg / vto, beta, gamma, phi, phib, cox, xnsub, xnfs, xd, xj, xld,
* 1 xlamda, uo, uexp, vbp, utra, vmax, xneff, xl, xw, vbi, von, vdsat, qspof,
* 2 beta0, beta1, cdrain, xqco, xqc, fnarrw, fshort, lev
* common / status / omega, time, delta, delold(7), ag(7), vt, xni, egfet,
* 1 xmu, sfactr, mode, modedc, icalc, initf, method, iord, maxord, noncon,
* 2 iterno, itemno, nosolv, modac, ipiv, ivmflg, ipostp, iscrch, iofile
* common / knstnt / twopi, xlog2, xlog10, root2, rad, boltz, charge, ctok,
* 1 gmin, reltol, abstol, vntol, trtol, chgtol, eps0, epssil, epsox,
* 2 pivtol, pivrel
*/
/* equivalence (xlamda, alpha), (vbp, theta), (uexp, eta), (utra, xkappa) */
double coeff0 = 0.0631353e0;
double coeff1 = 0.8013292e0;
double coeff2 = -0.01110777e0;
double phibs; /* phi - vbs */
double sqphbs; /* square root of phibs */
double dsqdvb; /* */
double arga, argb, argc;
double dfsdvb;
double dxndvb = 0.0, dvodvb = 0.0, dvodvd = 0.0,
dvsdvg, dvsdvb, dvsdvd, xn = 0.0;
double onvdsc = 0.0;
double fdrain = 0.0;
double dfddvg = 0.0, dfddvb = 0.0,
dfddvd = 0.0,
delxl, dldvd,
ddldvg, ddldvd, ddldvb,
gds0 = 0.0;
double fshort;
/*
* bypasses the computation of charges
*/
/*
* reference cdrain equations to source and
* charge equations to bulk
*/
vdsat = 0.0;
var oneoverxl = 1.0 / effectiveLength;
var eta = _mbp.Eta * 8.15e-22 / (_modeltemp.OxideCapFactor * effectiveLength * effectiveLength * effectiveLength);
/*
* .....square root term
*/
if ((Mode == 1 ? vbs : vbd) <= 0.0)
{
phibs = _temp.TempPhi - (Mode == 1 ? vbs : vbd);
sqphbs = Math.Sqrt(phibs);
dsqdvb = -0.5 / sqphbs;
}
else
{
var sqphis = Math.Sqrt(_temp.TempPhi); /* square root of phi */
var sqphs3 = _temp.TempPhi * sqphis; /* square root of phi cubed */
sqphbs = sqphis / (1.0 + (Mode == 1 ? vbs : vbd) / (_temp.TempPhi + _temp.TempPhi));
phibs = sqphbs * sqphbs;
dsqdvb = -phibs / (sqphs3 + sqphs3);
}
/*
* .....short channel effect factor
*/
if (_mbp.JunctionDepth > 0 && _modeltemp.CoefficientDepletionLayerWidth > 0.0)
{
var wps = _modeltemp.CoefficientDepletionLayerWidth * sqphbs;
var oneoverxj = 1.0 / _mbp.JunctionDepth; /* 1 / junction depth */
var xjonxl = _mbp.JunctionDepth * oneoverxl; /* junction depth / effective length */
var djonxj = _mbp.LateralDiffusion * oneoverxj;
var wponxj = wps * oneoverxj;
var wconxj = coeff0 + coeff1 * wponxj + coeff2 * wponxj * wponxj;
arga = wconxj + djonxj;
argc = wponxj / (1.0 + wponxj);
argb = Math.Sqrt(1.0 - argc * argc);
fshort = 1.0 - xjonxl * (arga * argb - djonxj);
var dwpdvb = _modeltemp.CoefficientDepletionLayerWidth * dsqdvb;
var dadvb = (coeff1 + coeff2 * (wponxj + wponxj)) * dwpdvb * oneoverxj;
var dbdvb = -argc * argc * (1.0 - argc) * dwpdvb / (argb * wps);
dfsdvb = -xjonxl * (dadvb * argb + arga * dbdvb);
}
else
{
fshort = 1.0;
dfsdvb = 0.0;
}
/*
* .....body effect
*/
var gammas = _mbp.Gamma * fshort;
var fbodys = 0.5 * gammas / (sqphbs + sqphbs);
var fbody = fbodys + _mbp.NarrowFactor / _bp.Width;
var onfbdy = 1.0 / (1.0 + fbody);
var dfbdvb = -fbodys * dsqdvb / sqphbs + fbodys * dfsdvb / fshort;
var qbonco = gammas * sqphbs + _mbp.NarrowFactor * phibs / _bp.Width;
var dqbdvb = gammas * dsqdvb + _mbp.Gamma * dfsdvb * sqphbs - _mbp.NarrowFactor / _bp.Width;
/*
* .....static feedback effect
*/
var vbix = _temp.TempVoltageBi * _mbp.MosfetType - eta * (Mode * vds);
/*
* .....threshold voltage
*/
var vth = vbix + qbonco;
var dvtdvd = -eta;
var dvtdvb = dqbdvb;
/*
* .....joint weak inversion and strong inversion
*/
von = vth;
if (_mbp.FastSurfaceStateDensity > 0.0)
{
var csonco = Circuit.Charge * _mbp.FastSurfaceStateDensity * 1e4 /* (cm * * 2 / m * * 2) */ * effectiveLength * _bp.Width /
oxideCap;
var cdonco = qbonco / (phibs + phibs);
xn = 1.0 + csonco + cdonco;
von = vth + vt * xn;
dxndvb = dqbdvb / (phibs + phibs) - qbonco * dsqdvb / (phibs * sqphbs);
dvodvd = dvtdvd;
dvodvb = dvtdvb + vt * dxndvb;
}
else
{
/*
* .....cutoff region
*/
if ((Mode == 1 ? vgs : vgd) <= von)
{
cdrain = 0.0;
Transconductance = 0.0;
CondDs = 0.0;
TransconductanceBs = 0.0;
goto innerline1000;
}
}
/*
* .....device is on
*/
var vgsx = Math.Max(Mode == 1 ? vgs : vgd, von);
/*
* .....mobility modulation by gate voltage
*/
var onfg = 1.0 + _mbp.Theta * (vgsx - vth);
var fgate = 1.0 / onfg;
var us = _temp.TempSurfaceMobility * 1e-4 /*(m**2/cm**2)*/ * fgate;
var dfgdvg = -_mbp.Theta * fgate * fgate;
var dfgdvd = -dfgdvg * dvtdvd;
var dfgdvb = -dfgdvg * dvtdvb;
/*
* .....saturation voltage
*/
vdsat = (vgsx - vth) * onfbdy;
if (_mbp.MaxDriftVelocity <= 0.0)
{
dvsdvg = onfbdy;
dvsdvd = -dvsdvg * dvtdvd;
dvsdvb = -dvsdvg * dvtdvb - vdsat * dfbdvb * onfbdy;
}
else
{
var vdsc = effectiveLength * _mbp.MaxDriftVelocity / us;
onvdsc = 1.0 / vdsc;
arga = (vgsx - vth) * onfbdy;
argb = Math.Sqrt(arga * arga + vdsc * vdsc);
vdsat = arga + vdsc - argb;
var dvsdga = (1.0 - arga / argb) * onfbdy;
dvsdvg = dvsdga - (1.0 - vdsc / argb) * vdsc * dfgdvg * onfg;
dvsdvd = -dvsdvg * dvtdvd;
dvsdvb = -dvsdvg * dvtdvb - arga * dvsdga * dfbdvb;
}
/*
* .....current factors in linear region
*/
var vdsx = Math.Min(Mode * vds, vdsat);
if (vdsx.Equals(0.0))
{
goto line900;
}
var cdo = vgsx - vth - 0.5 * (1.0 + fbody) * vdsx;
var dcodvb = -dvtdvb - 0.5 * dfbdvb * vdsx;
/*
* .....normalized drain current
*/
var cdnorm = cdo * vdsx;
Transconductance = vdsx;
CondDs = vgsx - vth - (1.0 + fbody + dvtdvd) * vdsx;
TransconductanceBs = dcodvb * vdsx;
/*
* .....drain current without velocity saturation effect
*/
var cd1 = beta * cdnorm;
beta = beta * fgate;
cdrain = beta * cdnorm;
Transconductance = beta * Transconductance + dfgdvg * cd1;
CondDs = beta * CondDs + dfgdvd * cd1;
TransconductanceBs = beta * TransconductanceBs;
/*
* .....velocity saturation factor
*/
if (_mbp.MaxDriftVelocity > 0.0)
{
fdrain = 1.0 / (1.0 + vdsx * onvdsc);
var fd2 = fdrain * fdrain;
arga = fd2 * vdsx * onvdsc * onfg;
dfddvg = -dfgdvg * arga;
dfddvd = -dfgdvd * arga - fd2 * onvdsc;
dfddvb = -dfgdvb * arga;
/*
* .....drain current
*/
Transconductance = fdrain * Transconductance + dfddvg * cdrain;
CondDs = fdrain * CondDs + dfddvd * cdrain;
TransconductanceBs = fdrain * TransconductanceBs + dfddvb * cdrain;
cdrain = fdrain * cdrain;
}
/*
* .....channel length modulation
*/
if (Mode * vds <= vdsat)
{
goto line700;
}
if (_mbp.MaxDriftVelocity <= 0.0)
{
goto line510;
}
if (_modeltemp.Alpha.Equals(0.0))
{
goto line700;
}
var cdsat = cdrain;
var gdsat = cdsat * (1.0 - fdrain) * onvdsc;
gdsat = Math.Max(1.0e-12, gdsat);
var gdoncd = gdsat / cdsat;
var gdonfd = gdsat / (1.0 - fdrain);
var gdonfg = gdsat * onfg;
var dgdvg = gdoncd * Transconductance - gdonfd * dfddvg + gdonfg * dfgdvg;
var dgdvd = gdoncd * CondDs - gdonfd * dfddvd + gdonfg * dfgdvd;
var dgdvb = gdoncd * TransconductanceBs - gdonfd * dfddvb + gdonfg * dfgdvb;
var emax = _mbp.Kappa * cdsat * oneoverxl / gdsat;
var emoncd = emax / cdsat;
var emongd = emax / gdsat;
var demdvg = emoncd * Transconductance - emongd * dgdvg;
var demdvd = emoncd * CondDs - emongd * dgdvd;
var demdvb = emoncd * TransconductanceBs - emongd * dgdvb;
arga = 0.5 * emax * _modeltemp.Alpha;
argc = _mbp.Kappa * _modeltemp.Alpha;
argb = Math.Sqrt(arga * arga + argc * (Mode * vds - vdsat));
delxl = argb - arga;
dldvd = argc / (argb + argb);
var dldem = 0.5 * (arga / argb - 1.0) * _modeltemp.Alpha;
ddldvg = dldem * demdvg;
ddldvd = dldem * demdvd - dldvd;
ddldvb = dldem * demdvb;
goto line520;
line510:
delxl = Math.Sqrt(_mbp.Kappa * (Mode * vds - vdsat) * _modeltemp.Alpha);
dldvd = 0.5 * delxl / (Mode * vds - vdsat);
ddldvg = 0.0;
ddldvd = -dldvd;
ddldvb = 0.0;
/*
* .....punch through approximation
*/
line520:
if (delxl > 0.5 * effectiveLength)
{
delxl = effectiveLength - effectiveLength * effectiveLength / (4.0 * delxl);
arga = 4.0 * (effectiveLength - delxl) * (effectiveLength - delxl) / (effectiveLength * effectiveLength);
ddldvg = ddldvg * arga;
ddldvd = ddldvd * arga;
ddldvb = ddldvb * arga;
dldvd = dldvd * arga;
}
/*
* .....saturation region
*/
var dlonxl = delxl * oneoverxl;
var xlfact = 1.0 / (1.0 - dlonxl);
cdrain = cdrain * xlfact;
var diddl = cdrain / (effectiveLength - delxl);
Transconductance = Transconductance * xlfact + diddl * ddldvg;
gds0 = CondDs * xlfact + diddl * ddldvd;
TransconductanceBs = TransconductanceBs * xlfact + diddl * ddldvb;
Transconductance = Transconductance + gds0 * dvsdvg;
TransconductanceBs = TransconductanceBs + gds0 * dvsdvb;
CondDs = gds0 * dvsdvd + diddl * dldvd;
/*
* .....finish strong inversion case
*/
line700:
if ((Mode == 1 ? vgs : vgd) < von)
{
/*
* .....weak inversion
*/
var onxn = 1.0 / xn;
var ondvt = onxn / vt;
var wfact = Math.Exp(((Mode == 1 ? vgs : vgd) - von) * ondvt);
cdrain = cdrain * wfact;
var gms = Transconductance * wfact;
var gmw = cdrain * ondvt;
Transconductance = gmw;
if (Mode * vds > vdsat)
{
Transconductance = Transconductance + gds0 * dvsdvg * wfact;
}
CondDs = CondDs * wfact + (gms - gmw) * dvodvd;
TransconductanceBs = TransconductanceBs * wfact + (gms - gmw) * dvodvb - gmw * ((Mode == 1 ? vgs : vgd) - von) * onxn * dxndvb;
}
/*
* .....charge computation
*/
goto innerline1000;
/*
* .....special case of vds = 0.0d0 */
line900:
beta = beta * fgate;
cdrain = 0.0;
Transconductance = 0.0;
CondDs = beta * (vgsx - vth);
TransconductanceBs = 0.0;
if (_mbp.FastSurfaceStateDensity > 0.0 && (Mode == 1 ? vgs : vgd) < von)
{
CondDs *= Math.Exp(((Mode == 1 ? vgs : vgd) - von) / (vt * xn));
}
innerline1000 :;
/*
* .....done
*/
}
/* DETAILPROF */
/* now deal with n vs p polarity */
Von = _mbp.MosfetType * von;
SaturationVoltageDs = _mbp.MosfetType * vdsat;
/* line 490 */
/*
* COMPUTE EQUIVALENT DRAIN CURRENT SOURCE
*/
DrainCurrent = Mode * cdrain - BdCurrent;
/*
* check convergence
*/
if (!_bp.Off || state.Init != RealState.InitializationStates.InitFix)
{
if (check == 1)
{
state.IsConvergent = false;
}
}
/* DETAILPROF */
/* save things away for next time */
VoltageBs = vbs;
VoltageBd = vbd;
VoltageGs = vgs;
VoltageDs = vds;
/* DETAILPROF */
/*
* meyer's capacitor model
*/
/* DETAILPROF */
/*
* load current vector
*/
var ceqbs = _mbp.MosfetType * (BsCurrent - (CondBs - state.Gmin) * vbs);
var ceqbd = _mbp.MosfetType * (BdCurrent - (CondBd - state.Gmin) * vbd);
if (Mode >= 0)
{
xnrm = 1;
xrev = 0;
cdreq = _mbp.MosfetType * (cdrain - CondDs * vds - Transconductance * vgs - TransconductanceBs * vbs);
}
else
{
xnrm = 0;
xrev = 1;
cdreq = -_mbp.MosfetType * (cdrain - CondDs * -vds - Transconductance * vgd - TransconductanceBs * vbd);
}
BulkPtr.Value -= ceqbs + ceqbd;
DrainPrimePtr.Value += ceqbd - cdreq;
SourcePrimePtr.Value += cdreq + ceqbs;
// Load Y-matrix
DrainDrainPtr.Value += _temp.DrainConductance;
SourceSourcePtr.Value += _temp.SourceConductance;
BulkBulkPtr.Value += CondBd + CondBs;
DrainPrimeDrainPrimePtr.Value += _temp.DrainConductance + CondDs + CondBd + xrev * (Transconductance + TransconductanceBs);
SourcePrimeSourcePrimePtr.Value += _temp.SourceConductance + CondDs + CondBs + xnrm * (Transconductance + TransconductanceBs);
DrainDrainPrimePtr.Value += -_temp.DrainConductance;
SourceSourcePrimePtr.Value += -_temp.SourceConductance;
BulkDrainPrimePtr.Value -= CondBd;
BulkSourcePrimePtr.Value -= CondBs;
DrainPrimeDrainPtr.Value += -_temp.DrainConductance;
DrainPrimeGatePtr.Value += (xnrm - xrev) * Transconductance;
DrainPrimeBulkPtr.Value += -CondBd + (xnrm - xrev) * TransconductanceBs;
DrainPrimeSourcePrimePtr.Value += -CondDs - xnrm * (Transconductance + TransconductanceBs);
SourcePrimeGatePtr.Value += -(xnrm - xrev) * Transconductance;
SourcePrimeSourcePtr.Value += -_temp.SourceConductance;
SourcePrimeBulkPtr.Value += -CondBs - (xnrm - xrev) * TransconductanceBs;
SourcePrimeDrainPrimePtr.Value += -CondDs - xrev * (Transconductance + TransconductanceBs);
}
/// <summary>
/// Execute behavior
/// </summary>
/// <param name="simulation">Base simulation</param>
public override void Load(BaseSimulation simulation)
{
if (simulation == null)
{
throw new ArgumentNullException(nameof(simulation));
}
var state = simulation.RealState;
var rstate = state;
double drainSatCur, sourceSatCur,
vgs, vds, vbs, vbd, vgd;
double von;
double vdsat, cdrain = 0.0,
cdreq;
int xnrm, xrev;
var vt = Circuit.KOverQ * _bp.Temperature;
var check = 1;
var effectiveLength = _bp.Length - 2 * _mbp.LateralDiffusion;
if (_temp.TempSaturationCurrentDensity.Equals(0) || _bp.DrainArea.Value <= 0 || _bp.SourceArea.Value <= 0)
{
drainSatCur = _temp.TempSaturationCurrent;
sourceSatCur = _temp.TempSaturationCurrent;
}
else
{
drainSatCur = _temp.TempSaturationCurrentDensity * _bp.DrainArea;
sourceSatCur = _temp.TempSaturationCurrentDensity * _bp.SourceArea;
}
var beta = _temp.TempTransconductance * _bp.Width / effectiveLength;
var oxideCap = _modeltemp.OxideCapFactor * effectiveLength * _bp.Width;
if (state.Init == RealState.InitializationStates.InitFloat || state.Init == RealState.InitializationStates.InitTransient ||
state.Init == RealState.InitializationStates.InitFix && !_bp.Off)
{
// general iteration
vbs = _mbp.MosfetType * (rstate.Solution[_bulkNode] - rstate.Solution[SourceNodePrime]);
vgs = _mbp.MosfetType * (rstate.Solution[_gateNode] - rstate.Solution[SourceNodePrime]);
vds = _mbp.MosfetType * (rstate.Solution[DrainNodePrime] - rstate.Solution[SourceNodePrime]);
// now some common crunching for some more useful quantities
vbd = vbs - vds;
vgd = vgs - vds;
var vgdo = VoltageGs - VoltageDs;
von = _mbp.MosfetType * Von;
/*
* limiting
* We want to keep device voltages from changing
* so fast that the exponentials churn out overflows
* and similar rudeness
*/
if (VoltageDs >= 0)
{
vgs = Transistor.LimitFet(vgs, VoltageGs, von);
vds = vgs - vgd;
vds = Transistor.LimitVoltageDs(vds, VoltageDs);
}
else
{
vgd = Transistor.LimitFet(vgd, vgdo, von);
vds = vgs - vgd;
vds = -Transistor.LimitVoltageDs(-vds, -VoltageDs);
vgs = vgd + vds;
}
if (vds >= 0)
{
vbs = Transistor.LimitJunction(vbs, VoltageBs, vt, _temp.SourceVCritical, out check);
}
else
{
vbd = Transistor.LimitJunction(vbd, VoltageBd, vt, _temp.DrainVCritical, out check);
vbs = vbd + vds;
}
}
else
{
/* ok - not one of the simple cases, so we have to
* look at other possibilities
*/
if (state.Init == RealState.InitializationStates.InitJunction && !_bp.Off)
{
vds = _mbp.MosfetType * _bp.InitialVoltageDs;
vgs = _mbp.MosfetType * _bp.InitialVoltageGs;
vbs = _mbp.MosfetType * _bp.InitialVoltageBs;
// TODO: At some point, check what this is supposed to do
if (vds.Equals(0.0) && vgs.Equals(0.0) && vbs.Equals(0.0) && (state.UseDc || state.Domain == RealState.DomainType.None || !state.UseIc))
{
vbs = -1;
vgs = _mbp.MosfetType * _temp.TempVt0;
vds = 0;
}
}
else
{
vbs = vgs = vds = 0;
}
}
/* now all the preliminaries are over - we can start doing the
* real work
*/
vbd = vbs - vds;
vgd = vgs - vds;
/* bulk - source and bulk - drain doides
* here we just evaluate the ideal diode current and the
* correspoinding derivative (conductance).
*/
if (vbs <= 0)
{
CondBs = sourceSatCur / vt;
BsCurrent = CondBs * vbs;
CondBs += state.Gmin;
}
else
{
var evbs = Math.Exp(vbs / vt);
CondBs = sourceSatCur * evbs / vt + state.Gmin;
BsCurrent = sourceSatCur * (evbs - 1);
}
if (vbd <= 0)
{
CondBd = drainSatCur / vt;
BdCurrent = CondBd * vbd;
CondBd += state.Gmin;
}
else
{
var evbd = Math.Exp(vbd / vt);
CondBd = drainSatCur * evbd / vt + state.Gmin;
BdCurrent = drainSatCur * (evbd - 1);
}
if (vds >= 0)
{
/* normal mode */
Mode = 1;
}
else
{
/* inverse mode */
Mode = -1;
}
{
/* moseq2(vds, vbs, vgs, gm, gds, gmbs, qg, qc, qb,
* cggb, cgdb, cgsb, cbgb, cbdb, cbsb)
*/
/* note: cgdb, cgsb, cbdb, cbsb never used */
/*
* this routine evaluates the drain current, its derivatives and
* the charges associated with the gate, channel and bulk
* for mosfets
*
*/
double arg;
double sarg;
double[] a4 = new double[4], b4 = new double[4], x4 = new double[8], poly4 = new double[8];
double dsrgdb, d2Sdb2;
double sphi = 0.0; /* square root of phi */
double sphi3 = 0.0; /* square root of phi cubed */
double barg, d2Bdb2,
dbrgdb,
argd = 0.0, args = 0.0;
double argxs = 0.0, argxd = 0.0;
double dgddb2, dgddvb, dgdvds, gamasd;
double xn = 0.0, argg = 0.0, vgst,
dodvds = 0.0, dxndvd = 0.0, dxndvb = 0.0,
dudvgs, dudvds, dudvbs;
double argv,
ufact, ueff, dsdvgs, dsdvbs;
double xvalid = 0.0, bsarg = 0.0;
double bodys = 0.0, gdbdvs = 0.0;
double dldvgs = 0.0, dldvds = 0.0, dldvbs = 0.0;
double xlamda = _mbp.Lambda;
/* 'local' variables - these switch d & s around appropriately
* so that we don't have to worry about vds < 0
*/
double lvbs = Mode > 0 ? vbs : vbd;
double lvds = Mode * vds;
double lvgs = Mode > 0 ? vgs : vgd;
double phiMinVbs = _temp.TempPhi - lvbs;
double tmp; /* a temporary variable, not used for more than */
/* about 10 lines at a time */
/*
* compute some useful quantities
*/
if (lvbs <= 0.0)
{
sarg = Math.Sqrt(phiMinVbs);
dsrgdb = -0.5 / sarg;
d2Sdb2 = 0.5 * dsrgdb / phiMinVbs;
}
else
{
sphi = Math.Sqrt(_temp.TempPhi);
sphi3 = _temp.TempPhi * sphi;
sarg = sphi / (1.0 + 0.5 * lvbs / _temp.TempPhi);
tmp = sarg / sphi3;
dsrgdb = -0.5 * sarg * tmp;
d2Sdb2 = -dsrgdb * tmp;
}
if (lvds - lvbs >= 0)
{
barg = Math.Sqrt(phiMinVbs + lvds);
dbrgdb = -0.5 / barg;
d2Bdb2 = 0.5 * dbrgdb / (phiMinVbs + lvds);
}
else
{
barg = sphi / (1.0 + 0.5 * (lvbs - lvds) / _temp.TempPhi);
tmp = barg / sphi3;
dbrgdb = -0.5 * barg * tmp;
d2Bdb2 = -dbrgdb * tmp;
}
/*
* calculate threshold voltage (von)
* narrow - channel effect
*/
/* XXX constant per device */
var factor = 0.125 * _mbp.NarrowFactor * 2.0 * Math.PI * Transistor.EpsilonSilicon / oxideCap * effectiveLength;
/* XXX constant per device */
var eta = 1.0 + factor;
var vbin = _temp.TempVoltageBi * _mbp.MosfetType + factor * phiMinVbs;
if (_mbp.Gamma > 0.0 || _mbp.SubstrateDoping > 0.0)
{
var xwd = _modeltemp.Xd * barg;
var xws = _modeltemp.Xd * sarg;
/*
* short - channel effect with vds .ne. 0.0
*/
var argss = 0.0;
var argsd = 0.0;
var dbargs = 0.0;
var dbargd = 0.0;
dgdvds = 0.0;
dgddb2 = 0.0;
if (_mbp.JunctionDepth > 0)
{
tmp = 2.0 / _mbp.JunctionDepth;
argxs = 1.0 + xws * tmp;
argxd = 1.0 + xwd * tmp;
args = Math.Sqrt(argxs);
argd = Math.Sqrt(argxd);
tmp = .5 * _mbp.JunctionDepth / effectiveLength;
argss = tmp * (args - 1.0);
argsd = tmp * (argd - 1.0);
}
gamasd = _mbp.Gamma * (1.0 - argss - argsd);
var dbxwd = _modeltemp.Xd * dbrgdb;
var dbxws = _modeltemp.Xd * dsrgdb;
if (_mbp.JunctionDepth > 0)
{
tmp = 0.5 / effectiveLength;
dbargs = tmp * dbxws / args;
dbargd = tmp * dbxwd / argd;
var dasdb2 = -_modeltemp.Xd * (d2Sdb2 + dsrgdb * dsrgdb * _modeltemp.Xd / (_mbp.JunctionDepth * argxs)) / (effectiveLength *
args);
var daddb2 = -_modeltemp.Xd * (d2Bdb2 + dbrgdb * dbrgdb * _modeltemp.Xd / (_mbp.JunctionDepth * argxd)) / (effectiveLength *
argd);
dgddb2 = -0.5 * _mbp.Gamma * (dasdb2 + daddb2);
}
dgddvb = -_mbp.Gamma * (dbargs + dbargd);
if (_mbp.JunctionDepth > 0)
{
var ddxwd = -dbxwd;
dgdvds = -_mbp.Gamma * 0.5 * ddxwd / (effectiveLength * argd);
}
}
else
{
gamasd = _mbp.Gamma;
dgddvb = 0.0;
dgdvds = 0.0;
dgddb2 = 0.0;
}
von = vbin + gamasd * sarg;
var vth = von;
vdsat = 0.0;
if (!_mbp.FastSurfaceStateDensity.Value.Equals(0.0) && !oxideCap.Equals(0.0))
{
/* XXX constant per model */
var cfs = Circuit.Charge * _mbp.FastSurfaceStateDensity * 1e4;
var cdonco = -(gamasd * dsrgdb + dgddvb * sarg) + factor;
xn = 1.0 + cfs / oxideCap * _bp.Width * effectiveLength + cdonco;
tmp = vt * xn;
von = von + tmp;
argg = 1.0 / tmp;
vgst = lvgs - von;
}
else
{
vgst = lvgs - von;
if (lvgs <= von)
{
/*
* cutoff region
*/
CondDs = 0.0;
goto line1050;
}
}
/*
* compute some more useful quantities
*/
var sarg3 = sarg * sarg * sarg;
/* XXX constant per model */
var sbiarg = Math.Sqrt(_temp.TempBulkPotential);
var gammad = gamasd;
var dgdvbs = dgddvb;
var body = barg * barg * barg - sarg3;
var gdbdv = 2.0 * gammad * (barg * barg * dbrgdb - sarg * sarg * dsrgdb);
var dodvbs = -factor + dgdvbs * sarg + gammad * dsrgdb;
if (_mbp.FastSurfaceStateDensity.Value.Equals(0.0))
{
goto line400;
}
if (oxideCap.Equals(0.0))
{
goto line410;
}
dxndvb = 2.0 * dgdvbs * dsrgdb + gammad * d2Sdb2 + dgddb2 * sarg;
dodvbs = dodvbs + vt * dxndvb;
dxndvd = dgdvds * dsrgdb;
dodvds = dgdvds * sarg + vt * dxndvd;
/*
* evaluate effective mobility and its derivatives
*/
line400:
if (oxideCap <= 0.0)
{
goto line410;
}
var udenom = vgst;
tmp = _mbp.CriticalField * 100 /* cm / m */ * Transistor.EpsilonSilicon / _modeltemp.OxideCapFactor;
if (udenom <= tmp)
{
goto line410;
}
ufact = Math.Exp(_mbp.CriticalFieldExp * Math.Log(tmp / udenom));
ueff = _mbp.SurfaceMobility * 1e-4 /* (m * * 2 / cm * * 2) */ * ufact;
dudvgs = -ufact * _mbp.CriticalFieldExp / udenom;
dudvds = 0.0;
dudvbs = _mbp.CriticalFieldExp * ufact * dodvbs / vgst;
goto line500;
line410:
ufact = 1.0;
ueff = _mbp.SurfaceMobility * 1e-4 /* (m * * 2 / cm * * 2) */;
dudvgs = 0.0;
dudvds = 0.0;
dudvbs = 0.0;
/*
* evaluate saturation voltage and its derivatives according to
* grove - frohman equation
*/
line500:
var vgsx = lvgs;
gammad = gamasd / eta;
dgdvbs = dgddvb;
if (!_mbp.FastSurfaceStateDensity.Value.Equals(0.0) && !oxideCap.Equals(0.0))
{
vgsx = Math.Max(lvgs, von);
}
if (gammad > 0)
{
var gammd2 = gammad * gammad;
argv = (vgsx - vbin) / eta + phiMinVbs;
if (argv <= 0.0)
{
vdsat = 0.0;
dsdvgs = 0.0;
dsdvbs = 0.0;
}
else
{
arg = Math.Sqrt(1.0 + 4.0 * argv / gammd2);
vdsat = (vgsx - vbin) / eta + gammd2 * (1.0 - arg) / 2.0;
vdsat = Math.Max(vdsat, 0.0);
dsdvgs = (1.0 - 1.0 / arg) / eta;
dsdvbs = (gammad * (1.0 - arg) + 2.0 * argv / (gammad * arg)) / eta * dgdvbs + 1.0 / arg + factor * dsdvgs;
}
}
else
{
vdsat = (vgsx - vbin) / eta;
vdsat = Math.Max(vdsat, 0.0);
dsdvgs = 1.0;
dsdvbs = 0.0;
}
if (_mbp.MaxDriftVelocity > 0)
{
/*
* evaluate saturation voltage and its derivatives
* according to baum's theory of scattering velocity
* saturation
*/
var v1 = (vgsx - vbin) / eta + phiMinVbs;
var v2 = phiMinVbs;
var xv = _mbp.MaxDriftVelocity * effectiveLength / ueff;
var a1 = gammad / 0.75;
var b1 = -2.0 * (v1 + xv);
var c1 = -2.0 * gammad * xv;
var d1 = 2.0 * v1 * (v2 + xv) - v2 * v2 - 4.0 / 3.0 * gammad * sarg3;
var a = -b1;
var b = a1 * c1 - 4.0 * d1;
var c = -d1 * (a1 * a1 - 4.0 * b1) - c1 * c1;
var r = -a * a / 3.0 + b;
var s = 2.0 * a * a * a / 27.0 - a * b / 3.0 + c;
var r3 = r * r * r;
var s2 = s * s;
var p = s2 / 4.0 + r3 / 27.0;
var p0 = Math.Abs(p);
var p2 = Math.Sqrt(p0);
double y3;
if (p < 0)
{
var ro = Math.Sqrt(s2 / 4.0 + p0);
ro = Math.Log(ro) / 3.0;
ro = Math.Exp(ro);
var fi = Math.Atan(-2.0 * p2 / s);
y3 = 2.0 * ro * Math.Cos(fi / 3.0) - a / 3.0;
}
else
{
var p3 = -s / 2.0 + p2;
p3 = Math.Exp(Math.Log(Math.Abs(p3)) / 3.0);
var p4 = -s / 2.0 - p2;
p4 = Math.Exp(Math.Log(Math.Abs(p4)) / 3.0);
y3 = p3 + p4 - a / 3.0;
}
var iknt = 0;
var a3 = Math.Sqrt(a1 * a1 / 4.0 - b1 + y3);
var b3 = Math.Sqrt(y3 * y3 / 4.0 - d1);
for (int i = 1; i <= 4; i++)
{
a4[i - 1] = a1 / 2.0 + Sig1[i - 1] * a3;
b4[i - 1] = y3 / 2.0 + Sig2[i - 1] * b3;
var delta4 = a4[i - 1] * a4[i - 1] / 4.0 - b4[i - 1];
if (delta4 < 0)
{
continue;
}
iknt = iknt + 1;
tmp = Math.Sqrt(delta4);
x4[iknt - 1] = -a4[i - 1] / 2.0 + tmp;
iknt = iknt + 1;
x4[iknt - 1] = -a4[i - 1] / 2.0 - tmp;
}
var jknt = 0;
for (int j = 1; j <= iknt; j++)
{
if (x4[j - 1] <= 0)
{
continue;
}
/* XXX implement this sanely */
poly4[j - 1] = x4[j - 1] * x4[j - 1] * x4[j - 1] * x4[j - 1] + a1 * x4[j - 1] * x4[j - 1] * x4[j - 1];
poly4[j - 1] = poly4[j - 1] + b1 * x4[j - 1] * x4[j - 1] + c1 * x4[j - 1] + d1;
if (Math.Abs(poly4[j - 1]) > 1.0e-6)
{
continue;
}
jknt = jknt + 1;
if (jknt <= 1)
{
xvalid = x4[j - 1];
}
if (x4[j - 1] > xvalid)
{
continue;
}
xvalid = x4[j - 1];
}
if (jknt > 0)
{
vdsat = xvalid * xvalid - phiMinVbs;
}
}
/*
* evaluate effective channel length and its derivatives
*/
if (!lvds.Equals(0.0))
{
gammad = gamasd;
double dbsrdb;
if (lvbs - vdsat <= 0)
{
bsarg = Math.Sqrt(vdsat + phiMinVbs);
dbsrdb = -0.5 / bsarg;
}
else
{
bsarg = sphi / (1.0 + 0.5 * (lvbs - vdsat) / _temp.TempPhi);
dbsrdb = -0.5 * bsarg * bsarg / sphi3;
}
bodys = bsarg * bsarg * bsarg - sarg3;
gdbdvs = 2.0 * gammad * (bsarg * bsarg * dbsrdb - sarg * sarg * dsrgdb);
double xlfact;
double dldsat;
if (_mbp.MaxDriftVelocity <= 0)
{
if (_mbp.SubstrateDoping.Value.Equals(0.0))
{
goto line610;
}
if (xlamda > 0.0)
{
goto line610;
}
argv = (lvds - vdsat) / 4.0;
var sargv = Math.Sqrt(1.0 + argv * argv);
arg = Math.Sqrt(argv + sargv);
xlfact = _modeltemp.Xd / (effectiveLength * lvds);
xlamda = xlfact * arg;
dldsat = lvds * xlamda / (8.0 * sargv);
}
else
{
argv = (vgsx - vbin) / eta - vdsat;
var xdv = _modeltemp.Xd / Math.Sqrt(_mbp.ChannelCharge);
var xlv = _mbp.MaxDriftVelocity * xdv / (2.0 * ueff);
var vqchan = argv - gammad * bsarg;
var dqdsat = -1.0 + gammad * dbsrdb;
var vl = _mbp.MaxDriftVelocity * effectiveLength;
var dfunds = vl * dqdsat - ueff * vqchan;
var dfundg = (vl - ueff * vdsat) / eta;
var dfundb = -vl * (1.0 + dqdsat - factor / eta) + ueff * (gdbdvs - dgdvbs * bodys / 1.5) / eta;
dsdvgs = -dfundg / dfunds;
dsdvbs = -dfundb / dfunds;
if (_mbp.SubstrateDoping.Value.Equals(0.0))
{
goto line610;
}
if (xlamda > 0.0)
{
goto line610;
}
argv = lvds - vdsat;
argv = Math.Max(argv, 0.0);
var xls = Math.Sqrt(xlv * xlv + argv);
dldsat = xdv / (2.0 * xls);
xlfact = xdv / (effectiveLength * lvds);
xlamda = xlfact * (xls - xlv);
dldsat = dldsat / effectiveLength;
}
dldvgs = dldsat * dsdvgs;
dldvds = -xlamda + dldsat;
dldvbs = dldsat * dsdvbs;
}
// Edited to work
goto line610_finish;
line610:
dldvgs = 0.0;
dldvds = 0.0;
dldvbs = 0.0;
line610_finish:
/*
* limit channel shortening at punch - through
*/
var xwb = _modeltemp.Xd * sbiarg;
var xld = effectiveLength - xwb;
var clfact = 1.0 - xlamda * lvds;
dldvds = -xlamda - dldvds;
var xleff = effectiveLength * clfact;
var deltal = xlamda * lvds * effectiveLength;
if (_mbp.SubstrateDoping.Value.Equals(0.0))
{
xwb = 0.25e-6;
}
if (xleff < xwb)
{
xleff = xwb / (1.0 + (deltal - xld) / xwb);
clfact = xleff / effectiveLength;
var dfact = xleff * xleff / (xwb * xwb);
dldvgs = dfact * dldvgs;
dldvds = dfact * dldvds;
dldvbs = dfact * dldvbs;
}
/*
* evaluate effective beta (effective kp)
*/
var beta1 = beta * ufact / clfact;
/*
* test for mode of operation and branch appropriately
*/
gammad = gamasd;
dgdvbs = dgddvb;
if (lvds <= 1.0e-10)
{
if (lvgs <= von)
{
if (_mbp.FastSurfaceStateDensity.Value.Equals(0.0) || oxideCap.Equals(0.0))
{
CondDs = 0.0;
goto line1050;
}
CondDs = beta1 * (von - vbin - gammad * sarg) * Math.Exp(argg * (lvgs - von));
goto line1050;
}
CondDs = beta1 * (lvgs - vbin - gammad * sarg);
goto line1050;
}
if (lvgs > von)
{
goto line900;
}
/*
* subthreshold region
*/
if (vdsat <= 0)
{
CondDs = 0.0;
if (lvgs > vth)
{
goto doneval;
}
goto line1050;
}
var vdson = Math.Min(vdsat, lvds);
if (lvds > vdsat)
{
barg = bsarg;
body = bodys;
gdbdv = gdbdvs;
}
var cdson = beta1 * ((von - vbin - eta * vdson * 0.5) * vdson - gammad * body / 1.5);
var didvds = beta1 * (von - vbin - eta * vdson - gammad * barg);
var gdson = -cdson * dldvds / clfact - beta1 * dgdvds * body / 1.5;
if (lvds < vdsat)
{
gdson = gdson + didvds;
}
var gbson = -cdson * dldvbs / clfact + beta1 * (dodvbs * vdson + factor * vdson - dgdvbs * body / 1.5 - gdbdv);
if (lvds > vdsat)
{
gbson = gbson + didvds * dsdvbs;
}
var expg = Math.Exp(argg * (lvgs - von));
cdrain = cdson * expg;
var gmw = cdrain * argg;
Transconductance = gmw;
if (lvds > vdsat)
{
Transconductance = gmw + didvds * dsdvgs * expg;
}
tmp = gmw * (lvgs - von) / xn;
CondDs = gdson * expg - Transconductance * dodvds - tmp * dxndvd;
TransconductanceBs = gbson * expg - Transconductance * dodvbs - tmp * dxndvb;
goto doneval;
line900:
if (lvds <= vdsat)
{
/*
* linear region
*/
cdrain = beta1 * ((lvgs - vbin - eta * lvds / 2.0) * lvds - gammad * body / 1.5);
arg = cdrain * (dudvgs / ufact - dldvgs / clfact);
Transconductance = arg + beta1 * lvds;
arg = cdrain * (dudvds / ufact - dldvds / clfact);
CondDs = arg + beta1 * (lvgs - vbin - eta * lvds - gammad * barg - dgdvds * body / 1.5);
arg = cdrain * (dudvbs / ufact - dldvbs / clfact);
TransconductanceBs = arg - beta1 * (gdbdv + dgdvbs * body / 1.5 - factor * lvds);
}
else
{
/*
* saturation region
*/
cdrain = beta1 * ((lvgs - vbin - eta * vdsat / 2.0) * vdsat - gammad * bodys / 1.5);
arg = cdrain * (dudvgs / ufact - dldvgs / clfact);
Transconductance = arg + beta1 * vdsat + beta1 * (lvgs - vbin - eta * vdsat - gammad * bsarg) * dsdvgs;
CondDs = -cdrain * dldvds / clfact - beta1 * dgdvds * bodys / 1.5;
arg = cdrain * (dudvbs / ufact - dldvbs / clfact);
TransconductanceBs = arg - beta1 * (gdbdvs + dgdvbs * bodys / 1.5 - factor * vdsat) + beta1 * (lvgs - vbin - eta * vdsat - gammad *
bsarg) * dsdvbs;
}
/*
* compute charges for "on" region
*/
goto doneval;
/*
* finish special cases
*/
line1050:
cdrain = 0.0;
Transconductance = 0.0;
TransconductanceBs = 0.0;
/*
* finished
*/
}
doneval:
Von = _mbp.MosfetType * von;
SaturationVoltageDs = _mbp.MosfetType * vdsat;
/*
* COMPUTE EQUIVALENT DRAIN CURRENT SOURCE
*/
DrainCurrent = Mode * cdrain - BdCurrent;
/*
* check convergence
*/
if (!_bp.Off || state.Init != RealState.InitializationStates.InitFix)
{
if (check == 1)
{
state.IsConvergent = false;
}
}
VoltageBs = vbs;
VoltageBd = vbd;
VoltageGs = vgs;
VoltageDs = vds;
/*
* load current vector
*/
var ceqbs = _mbp.MosfetType * (BsCurrent - (CondBs - state.Gmin) * vbs);
var ceqbd = _mbp.MosfetType * (BdCurrent - (CondBd - state.Gmin) * vbd);
if (Mode >= 0)
{
xnrm = 1;
xrev = 0;
cdreq = _mbp.MosfetType * (cdrain - CondDs * vds - Transconductance * vgs - TransconductanceBs * vbs);
}
else
{
xnrm = 0;
xrev = 1;
cdreq = -_mbp.MosfetType * (cdrain - CondDs * -vds - Transconductance * vgd - TransconductanceBs * vbd);
}
BulkPtr.Value -= ceqbs + ceqbd;
DrainPrimePtr.Value += ceqbd - cdreq;
SourcePrimePtr.Value += cdreq + ceqbs;
// load Y-matrix
DrainDrainPtr.Value += _temp.DrainConductance;
SourceSourcePtr.Value += _temp.SourceConductance;
BulkBulkPtr.Value += CondBd + CondBs;
DrainPrimeDrainPrimePtr.Value += _temp.DrainConductance + CondDs + CondBd + xrev * (Transconductance + TransconductanceBs);
SourcePrimeSourcePrimePtr.Value += _temp.SourceConductance + CondDs + CondBs + xnrm * (Transconductance + TransconductanceBs);
DrainDrainPrimePtr.Value += -_temp.DrainConductance;
SourceSourcePrimePtr.Value += -_temp.SourceConductance;
BulkDrainPrimePtr.Value -= CondBd;
BulkSourcePrimePtr.Value -= CondBs;
DrainPrimeDrainPtr.Value += -_temp.DrainConductance;
DrainPrimeGatePtr.Value += (xnrm - xrev) * Transconductance;
DrainPrimeBulkPtr.Value += -CondBd + (xnrm - xrev) * TransconductanceBs;
DrainPrimeSourcePrimePtr.Value += -CondDs - xnrm * (Transconductance + TransconductanceBs);
SourcePrimeGatePtr.Value += -(xnrm - xrev) * Transconductance;
SourcePrimeSourcePtr.Value += -_temp.SourceConductance;
SourcePrimeBulkPtr.Value += -CondBs - (xnrm - xrev) * TransconductanceBs;
SourcePrimeDrainPrimePtr.Value += -CondDs - xrev * (Transconductance + TransconductanceBs);
}
/// <summary>
/// Execute behavior
/// </summary>
/// <param name="simulation">Base simulation</param>
public override void Load(BaseSimulation simulation)
{
if (simulation == null)
{
throw new ArgumentNullException(nameof(simulation));
}
var state = simulation.RealState;
double drainSatCur, sourceSatCur,
vgs, vds, vbs, vbd, vgd;
double von;
double vdsat, cdrain, cdreq;
int xnrm, xrev;
var vt = Circuit.KOverQ * _bp.Temperature;
var check = 1;
/* DETAILPROF */
/* first, we compute a few useful values - these could be
* pre - computed, but for historical reasons are still done
* here. They may be moved at the expense of instance size
*/
var effectiveLength = _bp.Length - 2 * _mbp.LateralDiffusion;
// This is how Spice 3f5 implements it... There may be better ways to check for 0.0
if (_temp.TempSaturationCurrentDensity.Equals(0) || _bp.DrainArea.Value.Equals(0) || _bp.SourceArea.Value.Equals(0))
{
drainSatCur = _temp.TempSaturationCurrent;
sourceSatCur = _temp.TempSaturationCurrent;
}
else
{
drainSatCur = _temp.TempSaturationCurrentDensity * _bp.DrainArea;
sourceSatCur = _temp.TempSaturationCurrentDensity * _bp.SourceArea;
}
var beta = _temp.TempTransconductance * _bp.Width / effectiveLength;
/*
* ok - now to do the start - up operations
*
* we must get values for vbs, vds, and vgs from somewhere
* so we either predict them or recover them from last iteration
* These are the two most common cases - either a prediction
* step or the general iteration step and they
* share some code, so we put them first - others later on
*/
if (state.Init == RealState.InitializationStates.InitFloat || state.Init == RealState.InitializationStates.InitTransient ||
state.Init == RealState.InitializationStates.InitFix && !_bp.Off)
{
// general iteration
vbs = _mbp.MosfetType * (state.Solution[_bulkNode] - state.Solution[SourceNodePrime]);
vgs = _mbp.MosfetType * (state.Solution[_gateNode] - state.Solution[SourceNodePrime]);
vds = _mbp.MosfetType * (state.Solution[DrainNodePrime] - state.Solution[SourceNodePrime]);
/* now some common crunching for some more useful quantities */
vbd = vbs - vds;
vgd = vgs - vds;
var vgdo = VoltageGs - VoltageDs;
von = _mbp.MosfetType * Von;
/*
* limiting
* we want to keep device voltages from changing
* so fast that the exponentials churn out overflows
* and similar rudeness
*/
if (VoltageDs >= 0)
{
vgs = Transistor.LimitFet(vgs, VoltageGs, von);
vds = vgs - vgd;
vds = Transistor.LimitVoltageDs(vds, VoltageDs);
}
else
{
vgd = Transistor.LimitFet(vgd, vgdo, von);
vds = vgs - vgd;
vds = -Transistor.LimitVoltageDs(-vds, -VoltageDs);
vgs = vgd + vds;
}
if (vds >= 0)
{
vbs = Transistor.LimitJunction(vbs, VoltageBs, vt, _temp.SourceVCritical, out check);
}
else
{
vbd = Transistor.LimitJunction(vbd, VoltageBd, vt, _temp.DrainVCritical, out check);
vbs = vbd + vds;
}
}
else
{
/* ok - not one of the simple cases, so we have to
* look at all of the possibilities for why we were
* called. We still just initialize the three voltages
*/
if (state.Init == RealState.InitializationStates.InitJunction && !_bp.Off)
{
vds = _mbp.MosfetType * _bp.InitialVoltageDs;
vgs = _mbp.MosfetType * _bp.InitialVoltageGs;
vbs = _mbp.MosfetType * _bp.InitialVoltageBs;
// This is what Spice 3f5 does, but I'm not sure how valid this still is
if (vds.Equals(0) && vgs.Equals(0) && vbs.Equals(0) && (state.UseDc || state.Domain == RealState.DomainType.None || !state.UseIc))
{
vbs = -1;
vgs = _mbp.MosfetType * _temp.TempVt0;
vds = 0;
}
}
else
{
vbs = vgs = vds = 0;
}
}
/* DETAILPROF */
/*
* now all the preliminaries are over - we can start doing the
* real work
*/
vbd = vbs - vds;
vgd = vgs - vds;
/*
* bulk - source and bulk - drain diodes
* here we just evaluate the ideal diode current and the
* corresponding derivative (conductance).
*/
if (vbs <= 0)
{
CondBs = sourceSatCur / vt;
BsCurrent = CondBs * vbs;
CondBs += state.Gmin;
}
else
{
var evbs = Math.Exp(Math.Min(Transistor.MaximumExponentArgument, vbs / vt));
CondBs = sourceSatCur * evbs / vt + state.Gmin;
BsCurrent = sourceSatCur * (evbs - 1);
}
if (vbd <= 0)
{
CondBd = drainSatCur / vt;
BdCurrent = CondBd * vbd;
CondBd += state.Gmin;
}
else
{
var evbd = Math.Exp(Math.Min(Transistor.MaximumExponentArgument, vbd / vt));
CondBd = drainSatCur * evbd / vt + state.Gmin;
BdCurrent = drainSatCur * (evbd - 1);
}
/* now to determine whether the user was able to correctly
* identify the source and drain of his device
*/
if (vds >= 0)
{
/* normal mode */
Mode = 1;
}
else
{
/* inverse mode */
Mode = -1;
}
/* DETAILPROF */
{
/*
* this block of code evaluates the drain current and its
* derivatives using the shichman - hodges model and the
* charges associated with the gate, channel and bulk for
* mosfets
*/
/* the following 4 variables are local to this code block until
* it is obvious that they can be made global
*/
double arg;
double sarg;
if ((Mode > 0 ? vbs : vbd) <= 0)
{
sarg = Math.Sqrt(_temp.TempPhi - (Mode > 0 ? vbs : vbd));
}
else
{
sarg = Math.Sqrt(_temp.TempPhi);
sarg = sarg - (Mode > 0 ? vbs : vbd) / (sarg + sarg);
sarg = Math.Max(0, sarg);
}
von = _temp.TempVoltageBi * _mbp.MosfetType + _mbp.Gamma * sarg;
var vgst = (Mode > 0 ? vgs : vgd) - von;
vdsat = Math.Max(vgst, 0);
if (sarg <= 0)
{
arg = 0;
}
else
{
arg = _mbp.Gamma / (sarg + sarg);
}
if (vgst <= 0)
{
/*
* cutoff region
*/
cdrain = 0;
Transconductance = 0;
CondDs = 0;
TransconductanceBs = 0;
}
else
{
/*
* saturation region
*/
var betap = beta * (1 + _mbp.Lambda * (vds * Mode));
if (vgst <= vds * Mode)
{
cdrain = betap * vgst * vgst * .5;
Transconductance = betap * vgst;
CondDs = _mbp.Lambda * beta * vgst * vgst * .5;
TransconductanceBs = Transconductance * arg;
}
else
{
/*
* linear region
*/
cdrain = betap * (vds * Mode) * (vgst - .5 * (vds * Mode));
Transconductance = betap * (vds * Mode);
CondDs = betap * (vgst - vds * Mode) + _mbp.Lambda * beta * (vds * Mode) * (vgst - .5 * (vds * Mode));
TransconductanceBs = Transconductance * arg;
}
}
/*
* finished
*/
}
/* now deal with n vs p polarity */
Von = _mbp.MosfetType * von;
SaturationVoltageDs = _mbp.MosfetType * vdsat;
/* line 490 */
/*
* COMPUTE EQUIVALENT DRAIN CURRENT SOURCE
*/
DrainCurrent = Mode * cdrain - BdCurrent;
/*
* check convergence
*/
if (!_bp.Off || state.Init != RealState.InitializationStates.InitFix)
{
if (check == 1)
{
state.IsConvergent = false;
}
}
/* DETAILPROF */
/* save things away for next time */
VoltageBs = vbs;
VoltageBd = vbd;
VoltageGs = vgs;
VoltageDs = vds;
/*
* load current vector
*/
var ceqbs = _mbp.MosfetType * (BsCurrent - (CondBs - state.Gmin) * vbs);
var ceqbd = _mbp.MosfetType * (BdCurrent - (CondBd - state.Gmin) * vbd);
if (Mode >= 0)
{
xnrm = 1;
xrev = 0;
cdreq = _mbp.MosfetType * (cdrain - CondDs * vds - Transconductance * vgs - TransconductanceBs * vbs);
}
else
{
xnrm = 0;
xrev = 1;
cdreq = -_mbp.MosfetType * (cdrain - CondDs * -vds - Transconductance * vgd - TransconductanceBs * vbd);
}
BulkPtr.Value -= ceqbs + ceqbd;
DrainPrimePtr.Value += ceqbd - cdreq;
SourcePrimePtr.Value += cdreq + ceqbs;
/*
* load y matrix
*/
DrainDrainPtr.Value += _temp.DrainConductance;
SourceSourcePtr.Value += _temp.SourceConductance;
BulkBulkPtr.Value += CondBd + CondBs;
DrainPrimeDrainPrimePtr.Value += _temp.DrainConductance + CondDs + CondBd + xrev * (Transconductance + TransconductanceBs);
SourcePrimeSourcePrimePtr.Value += _temp.SourceConductance + CondDs + CondBs + xnrm * (Transconductance + TransconductanceBs);
DrainDrainPrimePtr.Value += -_temp.DrainConductance;
SourceSourcePrimePtr.Value += -_temp.SourceConductance;
BulkDrainPrimePtr.Value -= CondBd;
BulkSourcePrimePtr.Value -= CondBs;
DrainPrimeDrainPtr.Value += -_temp.DrainConductance;
DrainPrimeGatePtr.Value += (xnrm - xrev) * Transconductance;
DrainPrimeBulkPtr.Value += -CondBd + (xnrm - xrev) * TransconductanceBs;
DrainPrimeSourcePrimePtr.Value += -CondDs - xnrm * (Transconductance + TransconductanceBs);
SourcePrimeGatePtr.Value += -(xnrm - xrev) * Transconductance;
SourcePrimeSourcePtr.Value += -_temp.SourceConductance;
SourcePrimeBulkPtr.Value += -CondBs - (xnrm - xrev) * TransconductanceBs;
SourcePrimeDrainPrimePtr.Value += -CondDs - xrev * (Transconductance + TransconductanceBs);
}
/// <summary>
/// Execute behavior
/// </summary>
/// <param name="simulation">Base simulation</param>
public override void Load(BaseSimulation simulation)
{
if (simulation == null)
{
throw new ArgumentNullException(nameof(simulation));
}
var state = simulation.RealState;
var rstate = state;
double drainSatCur, sourceSatCur,
vgs, vds, vbs, vbd, vgd;
double von;
double vdsat, cdrain = 0.0,
cdreq;
int xnrm, xrev;
var vt = Circuit.KOverQ * _bp.Temperature;
var check = 1;
var effectiveLength = _bp.Length - 2 * _mbp.LateralDiffusion;
if (_temp.TempSaturationCurrentDensity.Equals(0) || _bp.DrainArea.Value <= 0 || _bp.SourceArea.Value <= 0)
{
drainSatCur = _temp.TempSaturationCurrent;
sourceSatCur = _temp.TempSaturationCurrent;
}
else
{
drainSatCur = _temp.TempSaturationCurrentDensity * _bp.DrainArea;
sourceSatCur = _temp.TempSaturationCurrentDensity * _bp.SourceArea;
}
var beta = _temp.TempTransconductance * _bp.Width / effectiveLength;
var oxideCap = _mbp.OxideCapFactor * effectiveLength * _bp.Width;
if (state.Init == InitializationModes.Float || (simulation is TimeSimulation tsim && tsim.Method.BaseTime.Equals(0.0)) ||
state.Init == InitializationModes.Fix && !_bp.Off)
{
// general iteration
vbs = _mbp.MosfetType * (rstate.Solution[_bulkNode] - rstate.Solution[SourceNodePrime]);
vgs = _mbp.MosfetType * (rstate.Solution[_gateNode] - rstate.Solution[SourceNodePrime]);
vds = _mbp.MosfetType * (rstate.Solution[DrainNodePrime] - rstate.Solution[SourceNodePrime]);
// now some common crunching for some more useful quantities
vbd = vbs - vds;
vgd = vgs - vds;
var vgdo = VoltageGs - VoltageDs;
von = _mbp.MosfetType * Von;
/*
* limiting
* We want to keep device voltages from changing
* so fast that the exponentials churn out overflows
* and similar rudeness
*/
if (VoltageDs >= 0)
{
vgs = Transistor.LimitFet(vgs, VoltageGs, von);
vds = vgs - vgd;
vds = Transistor.LimitVoltageDs(vds, VoltageDs);
}
else
{
vgd = Transistor.LimitFet(vgd, vgdo, von);
vds = vgs - vgd;
vds = -Transistor.LimitVoltageDs(-vds, -VoltageDs);
vgs = vgd + vds;
}
if (vds >= 0)
{
vbs = Transistor.LimitJunction(vbs, VoltageBs, vt, _temp.SourceVCritical, out check);
}
else
{
vbd = Transistor.LimitJunction(vbd, VoltageBd, vt, _temp.DrainVCritical, out check);
vbs = vbd + vds;
}
}