public override void ApplyModelValues(ISimulationContext context)
{
var Is = DefinitionDevice.Param.SaturationCurrent;
var Vt = DefinitionDevice.Param.ThermalVoltage;
var n = DefinitionDevice.Param.IdealityCoefficient;
var Vd = voltage.GetValue();
// calculates current through the diode and it's derivative
DeviceHelpers.PnJunction(Is, Vd, Vt * n, out var Id, out var Geq);
Current = Id;
// stamp the equivalent circuit
var Ieq = Id - Geq * Vd;
conductanceStamper.Stamp(Geq);
currentStamper.Stamp(Ieq);
}
/// <summary>Gets values for the device model based on voltage across the diode.</summary>
/// <param name="vd">Voltage across the diode.</param>
/// <returns></returns>
private (double id, double geq, double cd) GetModelValues(double vd)
{
var m = Parameters.JunctionGradingCoefficient;
var vj = Parameters.JunctionPotential;
var fc = Parameters.ForwardBiasDepletionCapacitanceCoefficient;
var tt = Parameters.TransitTime;
var iss = Parameters.SaturationCurrent;
var jc = Parameters.JunctionCapacitance;
var bv = Parameters.ReverseBreakdownVoltage;
double id, geq;
if (vd >= smallBiasTreshold)
{
DeviceHelpers.PnJunction(iss, vd, vt, out id, out geq);
id += vd * gmin;
geq += gmin;
}
else if (vd > -bv)
{
id = -iss;
geq = gmin;
}
else
{
id = -iss * (Math.Exp(-(bv + vd) / vt) - 1 + bv / vt);
geq = iss * Math.Exp(-(bv + vd) / vt) / vt;
}
var cd = -tt * geq;
if (vd < capacitanceTreshold)
{
cd += jc / Math.Pow(1 - vd / vj, m);
}
else
{
cd += jc / Math.Pow(1 - fc, 1 + m) * (1 - fc * (1 + m) + m * vd / vj);
}
return(id, geq, cd);
}
