private static Structure CreateSiO2TestStructure()
{
var topMetal = new Metal(Length.FromNanometers(4));
topMetal.SetWorkFunction(Energy.FromElectronVolts(4.45));
var oxide = new Dielectric(Length.FromNanometers(2));
oxide.DielectricConstant = 3.9;
oxide.BandGap = Energy.FromElectronVolts(8.9);
oxide.ElectronAffinity = Energy.FromElectronVolts(0.95);
var semiconductor = new Semiconductor();
semiconductor.BandGap = Energy.FromElectronVolts(1.1252);
semiconductor.ElectronAffinity = Energy.FromElectronVolts(4.05);
semiconductor.DielectricConstant = 11.7;
semiconductor.IntrinsicCarrierConcentration = Concentration.FromPerCubicCentimeter(1.41E10);
semiconductor.DopingType = DopingType.N;
semiconductor.DopantConcentration = Concentration.FromPerCubicCentimeter(1E18);
var structure = new Structure();
structure.Temperature = new Temperature(300);
structure.AddLayer(semiconductor);
structure.AddLayer(oxide);
structure.AddLayer(topMetal);
return(structure);
}
private static Semiconductor CreateTestSemiconductor()
{
var semiconductor = new Semiconductor();
semiconductor.BandGap = Energy.FromElectronVolts(1.1252);
semiconductor.ElectronAffinity = Energy.FromElectronVolts(4.05);
semiconductor.DielectricConstant = 11.7;
semiconductor.IntrinsicCarrierConcentration = Concentration.FromPerCubicCentimeter(1.41E10);
semiconductor.DopingType = DopingType.N;
semiconductor.DopantConcentration = Concentration.FromPerCubicCentimeter(1E18);
return(semiconductor);
}
public void TestStructureWithOnlySemiconductorIsInvalid()
{
var semiconductor = new Semiconductor();
semiconductor.BandGap = Energy.FromElectronVolts(1.125);
semiconductor.ElectronAffinity = Energy.FromElectronVolts(4.05);
semiconductor.DielectricConstant = 11.7;
semiconductor.IntrinsicCarrierConcentration = Concentration.FromPerCubicCentimeter(1.41E10);
semiconductor.DopingType = DopingType.N;
semiconductor.DopantConcentration = Concentration.FromPerCubicCentimeter(1E18);
var structure = new Structure();
structure.AddLayer(semiconductor);
Assert.That(!structure.IsValid);
}
public void TestStructureWithoutDielectricIsInvalid()
{
var topMetal = new Metal(Length.FromNanometers(10));
topMetal.SetWorkFunction(Energy.FromElectronVolts(4.9));
var semiconductor = new Semiconductor();
semiconductor.BandGap = Energy.FromElectronVolts(1.125);
semiconductor.ElectronAffinity = Energy.FromElectronVolts(4.05);
semiconductor.DielectricConstant = 11.7;
semiconductor.IntrinsicCarrierConcentration = Concentration.FromPerCubicCentimeter(1.41E10);
semiconductor.DopingType = DopingType.N;
semiconductor.DopantConcentration = Concentration.FromPerCubicCentimeter(1E18);
var structure = new Structure();
structure.AddLayer(semiconductor);
structure.AddLayer(topMetal);
Assert.That(!structure.IsValid);
}
